NCE30H28 Specs and Replacement
Type Designator: NCE30H28
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 235 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 280 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 140 nS
Cossⓘ -
Output Capacitance: 1590 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: TO-220
- MOSFET ⓘ Cross-Reference Search
NCE30H28 datasheet
..1. Size:694K ncepower
nce30h28.pdf 
http //www.ncepower.com NCE30H28 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H28 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =30V ,I =280A Schematic diagram DS D R ... See More ⇒
7.1. Size:416K ncepower
nce30h29d.pdf
Pb Free Product http //www.ncepower.com NCE30H29D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H29D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V ,ID =290A Schematic diagram RDS(ON) ... See More ⇒
8.1. Size:331K ncepower
nce30h10g.pdf
http //www.ncepower.com NCE30H10G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3065G uses advanced trench technology and design General Features to provide excellent RDS(ON) with low gate charge. It can be VDS =30V,ID =100A used in a wide variety of applications. RDS(ON)=1.9m (typical) @ VGS=10V RDS(ON)=2.9m (typical) @ VGS=4.5V Application DC/... See More ⇒
8.2. Size:754K ncepower
nce30h15bg.pdf
http //www.ncepower.com NCE30H15BG NCE N-Channel Enhancement Mode Power MOSFET General Features V =30V,I =150A DS D Description R ... See More ⇒
8.3. Size:417K ncepower
nce30h14k.pdf
http //www.ncepower.com NCE30H14K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H14K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =140A RDS(ON) ... See More ⇒
8.4. Size:352K ncepower
nce30h12.pdf
Pb Free Product http //www.ncepower.com NCE30H12 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON) ... See More ⇒
8.5. Size:441K ncepower
nce30h15k.pdf
Pb Free Product http //www.ncepower.com NCE30H15K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON) ... See More ⇒
8.6. Size:643K ncepower
nce30h33ll.pdf
http //www.ncepower.com NCE30H33LL NCE N-Channel Enhancement Mode Power MOSFET General Features Description V =30V ,I =330A DS D The NCE30H33LL uses advanced trench technology and R ... See More ⇒
8.7. Size:391K ncepower
nce30h11bk.pdf
NCE30H11BK http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A Schematic diagram RDS(ON) =2.6m (typical) @ VGS=10V RDS(ON) =4.5m (typical) @ VGS=4... See More ⇒
8.8. Size:681K ncepower
nce30h10bk.pdf
http //www.ncepower.com NCE30H10BK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10BK uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =30V,I =100A DS D R ... See More ⇒
8.9. Size:723K ncepower
nce30h15b.pdf
Pb Free Product http //www.ncepower.com NCE30H15B NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15B uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =30V,I =150A DS D R ... See More ⇒
8.10. Size:721K ncepower
nce30h12ak.pdf
http //www.ncepower.com NCE30H12AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H12AK uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =30V,I =120A DS D R ... See More ⇒
8.11. Size:373K ncepower
nce30h10.pdf
Pb Free Product http //www.ncepower.com NCE30H10 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON) ... See More ⇒
8.12. Size:632K ncepower
nce30h11bg.pdf
http //www.ncepower.com NCE30H11BG NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11BG uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =30V,I =110A DS D R =2.3m (typical) @ V =10V DS(ON) GS R =3.8m (typical) @ V =4.5V DS(ON) GS Excellen... See More ⇒
8.13. Size:395K ncepower
nce30h10k.pdf
Pb Free Product http //www.ncepower.com NCE30H10K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON) ... See More ⇒
8.14. Size:693K ncepower
nce30h15bk.pdf
Pb Free Product http //www.ncepower.com NCE30H15BK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15BK uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =30V,I =150A DS D R ... See More ⇒
8.15. Size:418K ncepower
nce30h12k.pdf
Pb Free Product http //www.ncepower.com NCE30H12K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON) ... See More ⇒
8.16. Size:637K ncepower
nce30h10bg.pdf
http //www.ncepower.com NCE30H10BG NCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE30H10BG uses advanced trench technology and V =30V,I =100A DS D design to provide excellent R with low gate charge. It can R ... See More ⇒
8.17. Size:371K ncepower
nce30h11g.pdf
Pb Free Product http //www.ncepower.com NCE30H11G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A Schematic Diagram RDS(ON) ... See More ⇒
8.18. Size:523K ncepower
nce30h10ak.pdf
http //www.ncepower.com NCE30H10AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON) ... See More ⇒
8.19. Size:384K ncepower
nce30h11k.pdf
http //www.ncepower.com NCE30H11K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A RDS(ON) ... See More ⇒
8.20. Size:398K ncepower
nce30h15.pdf
Pb Free Product http //www.ncepower.com NCE30H15 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON) ... See More ⇒
8.21. Size:816K cn vbsemi
nce30h10.pdf
NCE30H10 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.0035 at VGS = 10 V 98 30 82 nC 0.0045 at VGS = 4.5 V 98 APPLICATIONS OR-ing TO-220AB D Server DC/DC G S G D S N-Channel MOSFET Top View ABS... See More ⇒
8.22. Size:953K cn vbsemi
nce30h12k.pdf
NCE30H12K www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.0023 at VGS = 10 V 120 30 82 nC 0.0032 at VGS = 4.5 V 100 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET ... See More ⇒
Detailed specifications: NCE20ND06, NCE20ND07U, NCE20ND08U, NCE20ND15Q, NCE20PD05, NCE25P60K, NCE3068Q, NCE30H10BK, 4N60, NCE30ND07BS, NCE30PD08S, NCE3404X, NCE4003A, NCE40H14, NCE40ND25Q, NCE4606C, NCE4612SP
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
