NCE40ND25Q Specs and Replacement
Type Designator: NCE40ND25Q
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 109 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: DFN3.3X3.3-8L
NCE40ND25Q substitution
- MOSFET ⓘ Cross-Reference Search
NCE40ND25Q datasheet
nce40nd25q.pdf
http //www.ncepower.com NCE40ND25Q NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40ND25Q uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =25A Schematic Diagram DS D R =13.2m @ V =10V DS(ON) GS R =18m @ V =4.5V DS(ON) GS High densi... See More ⇒
nce40nd0812s.pdf
Pb Free Product NCE40ND0812S http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40ND0812S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =40V,ID =8A VDS =40V,ID =12A RDS(ON) ... See More ⇒
nce40np2815g.pdf
NCE40NP2815G http //www.ncepower.com NCE N&P-Channel complementary Power MOSFET Description The NCE40NP2815G uses advanced trench technology and design to provide excellent R with low gate DS(ON) charge. It can be used in a wide variety of applications. General Features Schematic diagram N channel V =40V,I =28A DS D R ... See More ⇒
nce40td120ww.pdf
Pb Free Product NCE40TD120WW 1200V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching ... See More ⇒
nce40er65bpf.pdf
Pb Free Product NCE40ER65BPF 650V, 40A, Trench FS III Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS III IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSIII Technology offering Very low V CE(sat) High speed switching... See More ⇒
nce40th60bp.pdf
PbFreeProduct NCE40TH60BP 600V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed sw... See More ⇒
nce40p70k.pdf
Pb Free Product http //www.ncepower.com NCE40P70K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P70K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-70A RDS(ON) ... See More ⇒
nce40td120bt.pdf
PbFreeProduct NCE40TD120BT 1200V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw... See More ⇒
nce40h25ll.pdf
http //www.ncepower.com NCE40H25LL NCE N-Channel Enhancement Mode Power MOSFET General Features Description VDS =40V ,ID =250A The NCE40H25LL uses advanced trench technology and RDS(ON) ... See More ⇒
nce40p40d.pdf
Pb Free Product http //www.ncepower.com NCE40P40D NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P40D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-40A RDS(ON) ... See More ⇒
nce40td65b.pdf
Pb Free Product NCE40TD65B 650V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching ... See More ⇒
nce40ed65bt.pdf
NCE40ED65BT 650V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.50V(Typ.) @ IC = 40... See More ⇒
nce4080d.pdf
http //www.ncepower.com NCE4080D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4080D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =80A Schematic diagram RDS(ON) ... See More ⇒
nce40ed65vt.pdf
NCE40ED65VT 650V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 40... See More ⇒
nce40td120vt.pdf
PbFreeProduct NCE40TD120VT 1200V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw... See More ⇒
nce40h10k.pdf
NCE40H10K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H10K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =100A DS D Schematic diagram R ... See More ⇒
nce40h11k.pdf
Pb Free Product NCE40H11K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H11K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =110A DS D Schematic diagram R ... See More ⇒
nce4090k.pdf
Pb Free Product NCE4090K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4090K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =90A DS D Schematic diagram R =4.2m @ V =10V (Typ) DS(ON) GS R =7.2m @ V =4.5V (Typ) ... See More ⇒
nce4060i.pdf
Pb Free Product NCE4060I http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4060I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =60A RDS(ON) ... See More ⇒
nce4009s.pdf
Pb Free Product http //www.ncepower.com NCE4009S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4009S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features N-Channel VDS =4... See More ⇒
nce40td120wt.pdf
PbFreeProduct NCE40TD120WT 1200V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw... See More ⇒
nce4012s.pdf
Pb Free Product NCE4012S http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4012S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =12A Schematic diagram RDS(ON) ... See More ⇒
nce40p40k.pdf
Pb Free Product http //www.ncepower.com NCE40P40K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P40K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-40A Schematic diagram RDS(ON) ... See More ⇒
nce40p05y.pdf
Pb Free Product http //www.ncepower.com NCE40P05Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05Y uses advanced trench technology and D design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. G General Features VDS =-40V,ID =-5.3A S RDS(ON) ... See More ⇒
nce4080k.pdf
Pb Free Product NCE4080K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =80A RDS(ON) ... See More ⇒
nce40h12.pdf
Pb Free Product NCE40H12 http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON) ... See More ⇒
nce4015s.pdf
NCE4015S http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4015S uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =15A Schematic diagram DS D R ... See More ⇒
nce40p25g.pdf
http //www.ncepower.com NCE40P25G NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P25G uses uses advanced trench technology to General Features provide excellent R , This device is suitable for use as a load V =-40V,I =-25A DS(ON) DS D switch or power management. R =11.5m (typical) @ V =10V DS(ON) GS R =18.5m (typical) @ V =4.5V Application DS(ON) GS DC/... See More ⇒
nce40th60bpf.pdf
Pb Free Product NCE40TH60BPF 600V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed switchin... See More ⇒
nce40td65bt.pdf
PbFreeProduct NCE40TD65BT 650V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High sp... See More ⇒
nce40ed120vtp.pdf
NCE40ED120VTP 1200V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC ... See More ⇒
nce40h29d.pdf
Pb Free Product http //www.ncepower.com NCE40H29D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H29D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V ,ID =290A RDS(ON) ... See More ⇒
nce40p06s.pdf
Pb Free Product http //www.ncepower.com NCE40P06S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-6A RDS(ON) ... See More ⇒
nce40p13s.pdf
Pb Free Product http //www.ncepower.com NCE40P13S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P13S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-13A RDS(ON) ... See More ⇒
nce40th60bt.pdf
Pb Free Product NCE40TH60BT 600V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed switching... See More ⇒
nce40p20q1.pdf
http //www.ncepower.com NCE40P20Q1 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P20Q1 uses advanced trench technology to provide General Features excellent R , This device is suitable for use as a load switch DS(ON) V = -40V,I = -20A DS D or power management. R ... See More ⇒
nce40h21.pdf
Pb Free Product http //www.ncepower.com NCE40H21 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V ,ID =210A Schematic diagram RDS(ON) ... See More ⇒
nce40eu65ut.pdf
NCE40EU65UT 650V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.80V(Typ.) @ IC = 40... See More ⇒
nce4005.pdf
http //www.ncepower.com NCE4005 NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE4005 uses advanced trench technology to provide G excellent R , low gate charge. This device is suitable for DS(ON) use as a Battery protection or in other switching application. S General Features Schematic Diagram V =40V,I =5A DS D R = 22m @ V =10V(Typ) DS(ON) GS R = 36m @... See More ⇒
nce4003a.pdf
http //www.ncepower.com NCE4003A NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE4003A uses advanced trench technology to provide G excellent R , low gate charge. This device is suitable for DS(ON) use as a Battery protection or in other switching application. S General Features Schematic Diagram V =40V,I =3A DS D R = 32m @ V =10V(Typ) DS(ON) GS R = 43m ... See More ⇒
nce4080.pdf
Pb Free Product NCE4080 http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4080 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =80A RDS(ON) ... See More ⇒
nce40p15q.pdf
http //www.ncepower.com NCE40P15Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P15Q uses advanced trench technology to provide General Features excellent R , This device is suitable for use as a load switch DS(ON) V = -40V,I = -15A DS D or power management. R ... See More ⇒
nce40td120lp.pdf
PbFreeProduct NCE40TD120LP 1200V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw... See More ⇒
nce40er65bt.pdf
Pb Free Product NCE40ER65BT 650V, 40A, Trench FS III Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS III IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSIII Technology offering Very low V CE(sat) High speed switching ... See More ⇒
nce4003.pdf
http //www.ncepower.com NCE4003 NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE4003 uses advanced trench technology to provide G excellent R , low gate charge. This device is suitable for DS(ON) use as a Battery protection or in other switching application. S General Features Schematic Diagram V =40V,I =3A DS D R = 33m @ V =10V(Typ) DS(ON) GS R = 52m @... See More ⇒
nce40t60bp.pdf
PbFreeProduct NCE40T60BP 600V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed swi... See More ⇒
nce40ts120vtp.pdf
PbFreeProduct NCE40TS120VTP 1200V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed s... See More ⇒
nce40p15k.pdf
NCE40P15K http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-40V,ID =-15A RDS(ON) ... See More ⇒
nce40ed120vt.pdf
NCE40ED120VT 1200V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC =... See More ⇒
nce40td60bp nce40td60bt.pdf
PbFreeProduct NCE40TD60BP,NCE40TD60BT 600V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat H... See More ⇒
nce40p05s.pdf
Pb Free Product http //www.ncepower.com NCE40P05S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-5.3A RDS(ON) ... See More ⇒
nce40h12i.pdf
Pb Free Product NCE40H12I http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON) ... See More ⇒
nce40td120lt.pdf
PbFreeProduct NCE40TD120LT 1200V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw... See More ⇒
nce40ed65bf.pdf
NCE40ED65BF 650V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.50V(Typ.) @ IC = 40... See More ⇒
nce40td120vtp.pdf
PbFreeProduct NCE40TD120VTP 1200V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed s... See More ⇒
nce40h30d.pdf
http //www.ncepower.com NCE40H30D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H30D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V ,ID =300A RDS(ON) ... See More ⇒
nce40p06j.pdf
http //www.ncepower.com NCE40P06J NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P06J uses advanced trench technology to provide D excellent R , low gate charge and operation with gate DS(ON) G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S Schematic diagram General Features V = -40V,I = -... See More ⇒
nce40er65bp.pdf
Pb Free Product NCE40ER65BP 650V, 40A, Trench FS III Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS III IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSIII Technology offering Very low V CE(sat) High speed switching ... See More ⇒
nce40h20a.pdf
Pb Free Product http //www.ncepower.com NCE40H20A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H20A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 40V,ID =200A RDS(ON) ... See More ⇒
nce40td120ut.pdf
PbFreeProduct NCE40TD120UT 1200V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw... See More ⇒
nce40h14.pdf
NCE40H14 http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H14 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =140A DS D R ... See More ⇒
nce40td135lt.pdf
PbFreeProduct NCE40TD135LT 1350V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw... See More ⇒
nce4060k.pdf
Pb Free Product NCE4060K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4060K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =60A RDS(ON) ... See More ⇒
nce40p20q.pdf
http //www.ncepower.com NCE40P20Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P20Q uses advanced trench technology to provide General Features excellent R , This device is suitable for use as a load switch DS(ON) V = -40V,I = -20A DS D or power management. R ... See More ⇒
nce40h11.pdf
Pb Free Product NCE40H11 http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H11 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =110A Schematic diagram DS D R ... See More ⇒
nce40ed75vt.pdf
NCE40ED75VT 750V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.55V(Typ.) @ IC = 40... See More ⇒
nce40h12a.pdf
NCE40H12A http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12A uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =40V,I =120A DS D R ... See More ⇒
nce4090g.pdf
Pb Free Product NCE4090G http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4090G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =90A RDS(ON) ... See More ⇒
nce40td135lp.pdf
PbFreeProduct NCE40TD135LP 1350V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw... See More ⇒
nce40h32ll.pdf
http //www.ncepower.com NCE40H32LL NCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE40H32LL uses advanced trench technology and VDS =40V ,ID =320A design to provide excellent RDS(ON) with low gate charge. It RDS(ON) ... See More ⇒
nce40p07s.pdf
Pb Free Product http //www.ncepower.com NCE40P07S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P07S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-6.2A RDS(ON) ... See More ⇒
nce40p05y.pdf
NCE40P05Y www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-2... See More ⇒
Detailed specifications: NCE3068Q, NCE30H10BK, NCE30H28, NCE30ND07BS, NCE30PD08S, NCE3404X, NCE4003A, NCE40H14, RFP50N06, NCE4606C, NCE4612SP, NCE4614B, NCE4614C, NCE4618SP, NCE4953A, NCE50N540F, NCE50NF220D
Keywords - NCE40ND25Q MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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