NCE4612SP MOSFET Datasheet: N-Ch, 24V, 6A. Full specification with pinout and replacement list

NCE4612SP Specs and Replacement

Type Designator: NCE4612SP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 235 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm

Package: CSP

NCE4612SP substitution

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NCE4612SP datasheet

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http //www.ncepower.com NCE4612SP NCE Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Description General Features The NCE4612SP uses advanced trench technology to provide V =24V,I =6A SSS S excellent R , low gate charge and operation with gate SS(ON) 2.5V drive voltages as low as 2.5V while retaining a 12V V rating. It GS(MAX) Common-drain type is ES... See More ⇒

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nce4614b.pdf pdf_icon

http //www.ncepower.com NCE4614B N and P-Channel Enhancement Mode Power MOSFET Description The NCE4614B uses advanced trench technology to provide excellent R and low gate charge . The complementary DS(ON) MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-channel P-channel Schematic diagram General Features N-Channel V =40V,I... See More ⇒

8.2. Size:531K ncepower
nce4614.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE4614 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4614 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =4... See More ⇒

8.3. Size:1011K ncepower
nce4614c.pdf pdf_icon

http //www.ncepower.com NCE4614C N and P-Channel Enhancement Mode Power MOSFET Description The NCE4614C uses advanced trench technology to provide excellent R and low gate charge. The complementary DS(ON) MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-channel P-channel Schematic diagram General Features N-Channel V =40V,I ... See More ⇒