NCE4614B MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE4614B
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15.7 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 67.5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0455 Ohm
Package: SOP-8
NCE4614B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE4614B Datasheet (PDF)
nce4614b.pdf
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http://www.ncepower.comNCE4614BN and P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4614B uses advanced trench technology to provideexcellent R and low gate charge . The complementaryDS(ON)MOSFETs may be used to form a level shifted high sideswitch, and for a host of other applications.N-channelP-channelSchematic diagramGeneral Features N-ChannelV =40V,I
nce4614.pdf
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Pb Free Producthttp://www.ncepower.com NCE4614N and P-Channel Enhancement Mode Power MOSFET Description The NCE4614 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =4
nce4614c.pdf
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http://www.ncepower.comNCE4614CN and P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4614C uses advanced trench technology to provideexcellent R and low gate charge. The complementaryDS(ON)MOSFETs may be used to form a level shifted high sideswitch, and for a host of other applications.N-channelP-channelSchematic diagramGeneral Features N-ChannelV =40V,I
nce4612sp.pdf
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http://www.ncepower.comNCE4612SPNCE Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorDescription General FeaturesThe NCE4612SP uses advanced trench technology to provide V =24V,I =6ASSS Sexcellent R , low gate charge and operation with gateSS(ON) 2.5V drivevoltages as low as 2.5V while retaining a 12V V rating. ItGS(MAX) Common-drain typeis ES
nce4618sp.pdf
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Pb Free Product Halogen Free Compliance http://www.ncepower.com NCE4618SPNCE Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Description General Features The NCE4618SP uses advanced trench technology to provide VSSS =20V,IS =6A excellent RSS(ON), low gate charge and operation with gate 2.5V drive voltages as low as 2.5V while retaining a 12V VGS
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
![NCE4614B](https://alltransistors.com/images/us.png)
![NCE4614B](https://alltransistors.com/images/es.png)
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