NCE50N540F MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE50N540F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 30.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 7.5 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 55 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm
Package: TO-220F
NCE50N540F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE50N540F Datasheet (PDF)
nce50n540f.pdf
NCE50N540FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 470 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 7.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.3 nCpower conversion, and ind
nce50n540k.pdf
NCE50N540KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 470 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 7.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indus
nce50nf600k.pdf
NCE50NF600KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 520 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.5 nCpower conversion, and ind
nce50nf180.pdf
NCE50NF180N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 150 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 17 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and indust
nce50nf180i.pdf
NCE50NF180IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 150 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 17 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and indus
nce50n2k2f.pdf
NCE50N2K2FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 2000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.4 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 4.2 nCpower conversion, and ind
nce50nf520k.pdf
NCE50NF520KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 7.2 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indu
nce50nf330i.pdf
NCE50NF330IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 280 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.5 nCpower conversion, and ind
nce50nf130v.pdf
NCE50NF130VN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 110 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 23.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 24.5 nCpower conversion, and i
nce50nf220f.pdf
NCE50NF220FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and ind
nce50nf600i.pdf
NCE50NF600IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 520 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.5 nCpower conversion, and ind
nce50nf220k.pdf
NCE50NF220KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and ind
nce50nf520.pdf
NCE50NF520N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 7.2 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indus
nce50nf220i.pdf
NCE50NF220IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and ind
nce50n1k8f.pdf
NCE50N1K8FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1600 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 3.3 nCpower conversion, and ind
nce50n1k8k.pdf
NCE50N1K8KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1600 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 3.3 nCpower conversion, and ind
nce50nf130f.pdf
NCE50NF130FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 110 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 23.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 24.5 nCpower conversion, and i
nce50nf220d.pdf
NCE50NF220DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and ind
nce50n1k2k.pdf
NCE50N1K2KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1050 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 4.2 nCpower conversion, and indus
nce50nf130k.pdf
NCE50NF130KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 110 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 23.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 24.5 nCpower conversion, and i
nce50nf520d.pdf
NCE50NF520DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 7.2 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indu
nce50nf130ll.pdf
NCE50NF130LLN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 110 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 23.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 24.5 nCpower conversion, and
nce50nf330f.pdf
NCE50NF330FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 280 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.5 nCpower conversion, and ind
nce50nf180k.pdf
NCE50NF180KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 150 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 17 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and indus
nce50n1k8i.pdf
NCE50N1K8IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1600 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 3.3 nCpower conversion, and ind
nce50nf130d.pdf
NCE50NF130DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 110 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 23.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 24.5 nCpower conversion, and i
nce50nf330.pdf
NCE50NF330N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 280 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.5 nCpower conversion, and indu
nce50n2k2r.pdf
NCE50N2K2RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 2000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.4 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 4.2 nCpower conversion, and ind
nce50nf600d.pdf
NCE50NF600DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 520 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.5 nCpower conversion, and ind
nce50nf520i.pdf
NCE50NF520IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 7.2 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indu
nce50nf330d.pdf
NCE50NF330DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 280 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.5 nCpower conversion, and ind
nce50n2k2i.pdf
NCE50N2K2IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 2000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.4 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 4.2 nCpower conversion, and ind
nce50n2k2d.pdf
NCE50N2K2DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 2000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.4 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 4.2 nCpower conversion, and ind
nce50nf180d.pdf
NCE50NF180DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 150 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 17 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and indus
nce50n2k2k.pdf
NCE50N2K2KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 2000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.4 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 4.2 nCpower conversion, and ind
nce50n1k8d.pdf
NCE50N1K8DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1600 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 3.3 nCpower conversion, and ind
nce50nf130t.pdf
NCE50NF130TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 110 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 23.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 24.5 nCpower conversion, and i
nce50nf220.pdf
NCE50NF220N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and indu
nce50nf600r.pdf
NCE50NF600RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 520 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.5 nCpower conversion, and ind
nce50nf180f.pdf
NCE50NF180FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 150 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 17 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and indus
nce50n1k8r.pdf
NCE50N1K8RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1600 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 1.9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 3.3 nCpower conversion, and ind
nce50nf330k.pdf
NCE50NF330KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 280 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.5 nCpower conversion, and ind
nce50nf520f.pdf
NCE50NF520FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 7.2 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indu
nce50nf600f.pdf
NCE50NF600FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 520 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.3 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.5 nCpower conversion, and ind
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IRCP340
History: IRCP340
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