NCE65N680F MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE65N680F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 31.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 6.7 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 13.5 nC
trⓘ - Rise Time: 6.7 nS
Cossⓘ - Output Capacitance: 15 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.68 Ohm
Package: TO-220F
NCE65N680F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE65N680F Datasheet (PDF)
nce65n680f.pdf
NCE65N680FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 600 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.7 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.5 nCpower conversion, and indust
nce65n680r.pdf
NCE65N680RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 600 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.7 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.5 nCpower conversion, and indust
nce65n680d.pdf
NCE65N680DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 600 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.7 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.5 nCpower conversion, and indust
nce65n680k.pdf
NCE65N680KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 600 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.7 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.5 nCpower conversion, and indust
nce65n680i.pdf
NCE65N680IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 600 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.7 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.5 nCpower conversion, and indust
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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