All MOSFET. NCE65N680F Datasheet

 

NCE65N680F Datasheet and Replacement


   Type Designator: NCE65N680F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6.7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6.7 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.68 Ohm
   Package: TO-220F
 

 NCE65N680F substitution

   - MOSFET ⓘ Cross-Reference Search

 

NCE65N680F Datasheet (PDF)

 ..1. Size:693K  ncepower
 nce65n680f.pdf pdf_icon

NCE65N680F

NCE65N680FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 600 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.7 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.5 nCpower conversion, and indust

 5.1. Size:675K  ncepower
 nce65n680r.pdf pdf_icon

NCE65N680F

NCE65N680RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 600 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.7 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.5 nCpower conversion, and indust

 5.2. Size:640K  ncepower
 nce65n680d.pdf pdf_icon

NCE65N680F

NCE65N680DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 600 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.7 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.5 nCpower conversion, and indust

 5.3. Size:623K  ncepower
 nce65n680k.pdf pdf_icon

NCE65N680F

NCE65N680KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 600 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.7 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.5 nCpower conversion, and indust

SHOW MORE

Datasheet: NCE60NF420 , NCE60NF420D , NCE60NF420F , NCE60NF420I , NCE60NF420K , NCE60P14K , NCE60P82AF , NCE65N680D , 8N60 , NCE65N680I , NCE65N680K , NCE65N680R , NCE65NF130 , NCE65NF130D , NCE65NF130F , NCE65NF130LL , NCE65NF130T .

Keywords - NCE65N680F MOSFET datasheet

 NCE65N680F cross reference
 NCE65N680F equivalent finder
 NCE65N680F lookup
 NCE65N680F substitution
 NCE65N680F replacement

 

 
Back to Top

 


 
.