All MOSFET. NCE65N680F Datasheet

 

NCE65N680F Datasheet and Replacement


   Type Designator: NCE65N680F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 6.7 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 6.7 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.68 Ohm
   Package: TO-220F
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NCE65N680F Datasheet (PDF)

 ..1. Size:693K  ncepower
 nce65n680f.pdf pdf_icon

NCE65N680F

NCE65N680FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 600 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.7 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.5 nCpower conversion, and indust

 5.1. Size:675K  ncepower
 nce65n680r.pdf pdf_icon

NCE65N680F

NCE65N680RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 600 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.7 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.5 nCpower conversion, and indust

 5.2. Size:640K  ncepower
 nce65n680d.pdf pdf_icon

NCE65N680F

NCE65N680DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 600 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.7 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.5 nCpower conversion, and indust

 5.3. Size:623K  ncepower
 nce65n680k.pdf pdf_icon

NCE65N680F

NCE65N680KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 600 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.7 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.5 nCpower conversion, and indust

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