NCE65NF130 MOSFET Datasheet: N-Ch, 650V, 26A. Full specification with pinout and replacement list

NCE65NF130 Specs and Replacement

Type Designator: NCE65NF130

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 237 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: TO-220

NCE65NF130 substitution

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NCE65NF130 datasheet

..1. Size:686K ncepower
nce65nf130.pdf pdf_icon

NCE65NF130 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 110 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 26 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC, AC... See More ⇒

0.1. Size:652K ncepower
nce65nf130ll.pdf pdf_icon

NCE65NF130LL N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 110 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 26 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC, ... See More ⇒

0.2. Size:692K ncepower
nce65nf130f.pdf pdf_icon

NCE65NF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 110 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 26 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC, A... See More ⇒

0.3. Size:675K ncepower
nce65nf130d.pdf pdf_icon

NCE65NF130D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 110 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 26 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC, A... See More ⇒