All MOSFET. NCE65NF130LL Datasheet

 

NCE65NF130LL Datasheet and Replacement


   Type Designator: NCE65NF130LL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 237 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TOLL-8L
 

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NCE65NF130LL Datasheet (PDF)

 ..1. Size:652K  ncepower
nce65nf130ll.pdf pdf_icon

NCE65NF130LL

NCE65NF130LLN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 110 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 26 Adiode.This super junction MOSFET fits the industrys AC-DCQg 41 nCSMPS requirements for PFC,

 4.1. Size:692K  ncepower
nce65nf130f.pdf pdf_icon

NCE65NF130LL

NCE65NF130FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 110 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 26 Adiode.This super junction MOSFET fits the industrys AC-DCQg 41 nCSMPS requirements for PFC, A

 4.2. Size:686K  ncepower
nce65nf130.pdf pdf_icon

NCE65NF130LL

NCE65NF130N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 110 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 26 Adiode.This super junction MOSFET fits the industrys AC-DCQg 41 nCSMPS requirements for PFC, AC

 4.3. Size:675K  ncepower
nce65nf130d.pdf pdf_icon

NCE65NF130LL

NCE65NF130DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 110 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 26 Adiode.This super junction MOSFET fits the industrys AC-DCQg 41 nCSMPS requirements for PFC, A

Datasheet: NCE65N680D , NCE65N680F , NCE65N680I , NCE65N680K , NCE65N680R , NCE65NF130 , NCE65NF130D , NCE65NF130F , AO3407 , NCE65NF130T , NCE65NF130V , NCE70N290T , NCE70N380T , NCE8205B , NCE8205T , NCE8601B , NCE8651Q .

History: HPMB84A | SL2026

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