NCEP014NH60GU Specs and Replacement
Type Designator: NCEP014NH60GU
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 280 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 318 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 2012 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
Package: DFN5X6-8L
NCEP014NH60GU substitution
- MOSFET ⓘ Cross-Reference Search
NCEP014NH60GU datasheet
ncep014nh60gu.pdf
http //www.ncepower.com NCEP014NH60GU NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP014NH60GU uses Super Trench III technology that V =60V,I =318A DS D is uniquely optimized to provide the most efficient high R =1.3m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and Excellent gate charge x R product(FOM) DS... See More ⇒
ncep0140ag.pdf
Pb Free Product http //www.ncepower.com NCEP0140AG NCE N-Channel Super Trench Power MOSFET Description The NCEP0140AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒
ncep0140al.pdf
Pb Free Product http //www.ncepower.com NCEP0140AL NCE N-Channel Super Trench Power MOSFET Description The NCEP0140AL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒
ncep0178d.pdf
Pb Free Product http //www.ncepower.com NCEP0178D NCE N-Channel Super Trench Power MOSFET Description The NCEP0178D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi... See More ⇒
ncep018n60agu.pdf
NCEP018N60AGU http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP018N60AGU uses Super Trench II technology that V =60V,I =195A DS D is uniquely optimized to provide the most efficient high R =1.4 m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =1.8 m (typical) @ V =4.5V DS(ON) GS switchi... See More ⇒
ncep0160ag.pdf
http //www.ncepower.com NCEP0160AG NCE N-Channel Super Trench Power MOSFET Description The NCEP0160AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit... See More ⇒
ncep01t13.pdf
Pb Free Product http //www.ncepower.com NCEP01T13 NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi... See More ⇒
ncep01t11d.pdf
Pb Free Product http //www.ncepower.com NCEP01T11D NCE N-Channel Super Trench Power MOSFET Description The NCEP01T11D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒
ncep0135a.pdf
Pb Free Product http //www.ncepower.com NCEP0135A NCE N-Channel Super Trench Power MOSFET Description The NCEP0135A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi... See More ⇒
ncep01t13ad.pdf
Pb Free Product http //www.ncepower.com NCEP01T13AD NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13AD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒
ncep0178f.pdf
Pb Free Product http //www.ncepower.com NCEP0178F NCE N-Channel Super Trench Power MOSFET Description The NCEP0178F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi... See More ⇒
ncep0109ar.pdf
http //www.ncepower.com NCEP0109AR NCE N-Channel Super Trench Power MOSFET Description The NCEP0109AR uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw... See More ⇒
ncep01t10g.pdf
http //www.ncepower.com NCEP01T10G NCE N-Channel Super Trench Power MOSFET Description The NCEP01T10G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit... See More ⇒
ncep01t18d.pdf
Pb Free Product http //www.ncepower.com NCEP01T18D NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi... See More ⇒
ncep018n85ll.pdf
NCEP018N85LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =320A switching performance. Both conduction and switching power RDS(ON)=1.3m , typical @ VGS=10V losses are minimized due to an extremely low combina... See More ⇒
ncep0160a.pdf
Pb Free Product http //www.ncepower.com NCEP0160A NCE N-Channel Super Trench Power MOSFET Description The NCEP0160A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for Sche... See More ⇒
ncep01t11.pdf
Pb Free Product http //www.ncepower.com NCEP01T11 NCE N-Channel Super Trench Power MOSFET Description The NCEP01T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi... See More ⇒
ncep0190g.pdf
Pb Free Product http //www.ncepower.com NCEP0190G NCE N-Channel Super Trench Power MOSFET Description The NCEP0190G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi... See More ⇒
ncep01t25t.pdf
http //www.ncepower.com NCEP01T25T NCE N-Channel Super Trench Power MOSFET Description The NCEP01T25T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit... See More ⇒
ncep015n30gu.pdf
http //www.ncepower.com NCEP015N30GU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =30V,ID =170A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.3m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=1.9m (typical) @ ... See More ⇒
ncep01t13a.pdf
Pb Free Product http //www.ncepower.com NCEP01T13A NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi... See More ⇒
ncep01t25ll.pdf
http //www.ncepower.com NCEP01T25LL NCE N-Channel Super Trench Power MOSFET Description The NCEP01T25LL uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =100V,ID =250A frequency switching performance. Both conduction and RDS(ON)=2.2m (typical) @ VGS=10V switching power losses are minimized due to an extremely l... See More ⇒
ncep01p35a.pdf
Pb Free Product http //www.ncepower.com NCEP01P35A NCE P-Channel Super Trench Power MOSFET Description The NCEP01P35A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-... See More ⇒
ncep016n10ll.pdf
Pb Free Product NCEP016N10LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =385A DS D switching performance. Both conduction and switching power R =1.2m , typical@ V =10V DS(ON) GS losses are minimized due to an extrem... See More ⇒
ncep01t12d.pdf
http //www.ncepower.com NCEP01T12D NCE N-Channel Super Trench Power MOSFET Description The NCEP01T12D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw... See More ⇒
ncep013nh40gu.pdf
NCEP013NH40GU http //www.ncepower.com NCE Automotive N-Channel Super Trench III Power MOSFET Description General Features The NCEP013NH40GU uses Super Trench III technology V =40V,I =276A DS D that is uniquely optimized to provide the most efficient high R =0.95m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =1.35m (typical) @ V =4.5V D... See More ⇒
ncep0155ag.pdf
http //www.ncepower.com NCEP0155AG NCE N-Channel Super Trench Power MOSFET Description The NCEP0155AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit... See More ⇒
ncep01p60g.pdf
Pb Free Product http //www.ncepower.com NCEP01P60G NCE P-Channel Super Trench Power MOSFET Description The NCEP01P60G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =-100V,I =-55A DS D switching performance. Both conduction and switching power R =22m (typical) @ V =-10V DS(ON) GS losses are minimized due to... See More ⇒
ncep0135af.pdf
http //www.ncepower.com NCEP0135AF NCE N-Channel Super Trench Power MOSFET Description The NCEP0135AFuses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swi... See More ⇒
ncep018n30gu.pdf
http //www.ncepower.com NCEP018N30GU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =30V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.4m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.0m (typical) @ ... See More ⇒
ncep016n85ll.pdf
Pb Free Product NCEP016N85LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =360A DS D switching performance. Both conduction and switching power R =1.2m , typical @ V =10V DS(ON) GS losses are minimized due to an extrem... See More ⇒
ncep018n10ll.pdf
NCEP018N10LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =320A DS D switching performance. Both conduction and switching power R =1.7m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinat... See More ⇒
ncep0116as.pdf
Pb Free Product http //www.ncepower.com NCEP0116AS NCE N-Channel Super Trench Power MOSFET Description The NCEP0116AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒
ncep01p35ag.pdf
http //www.ncepower.com NCEP01P35AG NCE P-Channel Super Trench Power MOSFET Description The NCEP01P35AG uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =-100V,I =-35A DS D switching performance. Both conduction and switching power R =37m (typical) @ V =-10V DS(ON) GS losses are minimized due to an extremely l... See More ⇒
ncep016n60vd.pdf
NCEP016N60VD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =305A DS D switching performance. Both conduction and switching power R =1.1m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinati... See More ⇒
ncep01t18.pdf
Pb Free Product http //www.ncepower.com NCEP01T18 NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi... See More ⇒
ncep018nh30qu.pdf
http //www.ncepower.com NCEP018NH30QU NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP018NH30QU uses Super Trench III technology V =30V,I =144A DS D that is uniquely optimized to provide the most efficient high R =1.4m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =2.0m (typical) @ V =10V DS(ON) GS switc... See More ⇒
ncep01nd35ag.pdf
http //www.ncepower.com NCEP01ND35AG NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP01ND35AG uses Super Trench technology that is VDS =100V,ID =35A uniquely optimized to provide the most efficient high RDS(ON)=18m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=22m (typical) @ VGS=4.5V switching power losses are... See More ⇒
ncep0107r.pdf
http //www.ncepower.com NCEP0107R NCE N-Channel Super Trench Power MOSFET Description The NCEP0107R uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency DS(ON) g switchin... See More ⇒
ncep0160.pdf
http //www.ncepower.com NCEP0160 NCE N-Channel Super Trench Power MOSFET Description The NCEP0160 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin... See More ⇒
ncep0107ar.pdf
http //www.ncepower.com NCEP0107AR NCE N-Channel Super Trench Power MOSFET Description The NCEP0107AR uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw... See More ⇒
ncep018n60d.pdf
NCEP018N60,NCEP018N60D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =60V,I =210A DS D uniquely optimized to provide the most efficient high frequency R =1.7m , typical (TO-220) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =1.5m , typical (TO-263) @ V =... See More ⇒
ncep0178ak.pdf
Pb Free Product http //www.ncepower.com NCEP0178AK NCE N-Channel Super Trench Power MOSFET Description The NCEP0178AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi... See More ⇒
ncep011n25qu.pdf
http //www.ncepower.com NCEP011N25QU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP011NH25QU uses Super Trench II technology V =25V,I =161A DS D that is uniquely optimized to provide the most efficient high R =1.1m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =1.8m (typical) @ V =4.5V DS(ON) GS switching p... See More ⇒
ncep01p40agu.pdf
http //www.ncepower.com NCEP01P40AGU NCE P-Channel Super Trench Power MOSFET Description The NCEP01P40AGU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =-100V,I =-40A DS D switching performance. Both conduction and switching power R =35m (typical) @ V =-10V DS(ON) GS losses are minimized due to an extremely... See More ⇒
ncep01t13bd.pdf
Pb Free Product http //www.ncepower.com NCEP01T13BD NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13BD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒
ncep019n10t.pdf
NCEP019N10T NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =340A DS D switching performance. Both conduction and switching power R =2.0m , typical@ V =10V DS(ON) GS losses are minimized due to an extremely low combinatio... See More ⇒
ncep018n60gu.pdf
NCEP018N60GU http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP018N60GU uses Super Trench II technology that is V =60V,I =195A DS D uniquely optimized to provide the most efficient high frequency R =1.5 m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R produc... See More ⇒
ncep0160g.pdf
http //www.ncepower.com NCEP0160G NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP0160G uses Super Trench technology that is VDS =100V,ID =60A uniquely optimized to provide the most efficient high RDS(ON)... See More ⇒
ncep0178al.pdf
http //www.ncepower.com NCEP0178AL NCE N-Channel Super Trench Power MOSFET Description The NCEP0178AL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit... See More ⇒
ncep01t13b.pdf
Pb Free Product http //www.ncepower.com NCEP01T13B NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13B uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒
ncep015n60ll.pdf
NCEP015N60LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =340A DS D switching performance. Both conduction and switching power R =1.0m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinati... See More ⇒
ncep018n60 ncep018n60d.pdf
NCEP018N60,NCEP018N60D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =60V,I =210A DS D uniquely optimized to provide the most efficient high frequency R =1.7m , typical (TO-220) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =1.5m , typical (TO-263) @ V =... See More ⇒
ncep01t15.pdf
Pb Free Product http //www.ncepower.com NCEP01T15 NCE N-Channel Super Trench Power MOSFET Description The NCEP01T15 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi... See More ⇒
ncep01t13d.pdf
Pb Free Product http //www.ncepower.com NCEP01T13D NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒
ncep0116k.pdf
http //www.ncepower.com NCEP0116K NCE N-Channel Super Trench Power MOSFET Description The NCEP0116K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch... See More ⇒
ncep0160f.pdf
Pb Free Product http //www.ncepower.com NCEP0160F NCE N-Channel Super Trench Power MOSFET Description The NCEP0160F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high... See More ⇒
ncep01t30t.pdf
Pb Free Product http //www.ncepower.com NCEP01T30T NCE N-Channel Super Trench Power MOSFET Description The NCEP01T30T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi... See More ⇒
ncep011nh25qu.pdf
http //www.ncepower.com NCEP011N25QU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP011NH25QU uses Super Trench II technology V =25V,I =161A DS D that is uniquely optimized to provide the most efficient high R =1.1m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =1.8m (typical) @ V =4.5V DS(ON) GS switching p... See More ⇒
ncep0112as.pdf
Pb Free Product http //www.ncepower.com NCEP0112AS NCE N-Channel Super Trench Power MOSFET Description The NCEP0112AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒
ncep0135ak.pdf
Pb Free Product http //www.ncepower.com NCEP0135AK NCE N-Channel Super Trench Power MOSFET Description The NCEP0135AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒
ncep015nh30aqu.pdf
NCEP015NH30AQU http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description The NCEP015NH30AQU uses Super Trench III technology General Features that is uniquely optimized to provide the most efficient high V =30V,I =174A DS D frequency switching performance. Both conduction and R =1.4m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to a... See More ⇒
ncep015nh30agu.pdf
NCEP015NH30AGU http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description The NCEP015NH30AGU uses Super Trench III technology General Features that is uniquely optimized to provide the most efficient high V =30V,I =180A DS D frequency switching performance. Both conduction and R =1.4m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to a... See More ⇒
ncep0178af.pdf
Pb Free Product http //www.ncepower.com NCEP0178AF NCE N-Channel Super Trench Power MOSFET Description The NCEP0178AF uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi... See More ⇒
ncep01t12.pdf
Pb Free Product http //www.ncepower.com NCEP01T12 NCE N-Channel Super Trench Power MOSFET Description The NCEP01T12 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi... See More ⇒
ncep012n85ll.pdf
NCEP012N85LL NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =400A DS D uniquely optimized to provide the most efficient high frequency R =1.0m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power losses are minimized due to an extremely low combination... See More ⇒
ncep01t18vd.pdf
http //www.ncepower.com NCEP01T18VD NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18VD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw... See More ⇒
ncep0178.pdf
Pb Free Product http //www.ncepower.com NCEP0178 NCE N-Channel Super Trench Power MOSFET Description The NCEP0178 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high... See More ⇒
ncep01t13ll.pdf
http //www.ncepower.com NCEP01T13LL NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13LL uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =100V,ID =160A frequency switching performance. Both conduction and RDS(ON)=3.3m , typical@ VGS=10V switching power losses are minimized due to an extremely l... See More ⇒
ncep011n25qu ncep011nh25qu.pdf
http //www.ncepower.com NCEP011N25QU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP011NH25QU uses Super Trench II technology V =25V,I =161A DS D that is uniquely optimized to provide the most efficient high R =1.1m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =1.8m (typical) @ V =4.5V DS(ON) GS switching p... See More ⇒
ncep015n85ll.pdf
NCEP015N85LL NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =370A DS D uniquely optimized to provide the most efficient high frequency R =1.1m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R product(FOM) DS(on) lo... See More ⇒
ncep01p60ag.pdf
NCEP01P60AG http //www.ncepower.com NCE P-Channel Super Trench Power MOSFET Description The NCEP01P60AG uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =-100V,I =-55A DS D switching performance. Both conduction and switching power R =19.5m (typical) @ V =-10V DS(ON) GS losses are minimized due to an extremel... See More ⇒
ncep01t18t.pdf
Pb Free Product http //www.ncepower.com NCEP01T18T NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒
ncep015nh30gu.pdf
NCEP015NH30GU http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP015NH30GU uses Super Trench III technology V =30V,I =189A DS D that is uniquely optimized to provide the most efficient high R =1.25m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =1.7m (typical) @ V =4.5V DS(ON) GS swi... See More ⇒
ncep0178a.pdf
Pb Free Product http //www.ncepower.com NCEP0178A NCE N-Channel Super Trench Power MOSFET Description The NCEP0178A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high... See More ⇒
ncep0120q.pdf
http //www.ncepower.com NCEP0120Q NCE N-Channel Super Trench Power MOSFET Description The NCEP0120Q uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =100V,ID =20A frequency switching performance. Both conduction and RDS(ON)=36m (typical) @ VGS=10V switching power losses are minimized due to an extremely low E... See More ⇒
ncep018n60.pdf
NCEP018N60,NCEP018N60D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =60V,I =210A DS D uniquely optimized to provide the most efficient high frequency R =1.7m , typical (TO-220) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =1.5m , typical (TO-263) @ V =... See More ⇒
ncep01p35ak.pdf
Pb Free Product http //www.ncepower.com NCEP01P35AK NCE P-Channel Super Trench Power MOSFET Description The NCEP01P35AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g hig... See More ⇒
ncep0114as.pdf
Pb Free Product http //www.ncepower.com NCEP0114AS NCE N-Channel Super Trench Power MOSFET Description The NCEP0114AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒
Detailed specifications: NCEA75H25, NCEAP020N60GU, NCEAP055N12D, NCEAP4075GU, NCEAP60P90AK, NCEP008NH40ASL, NCEP008NH40SL, NCEP013NH40GU, IRFB4110, NCEP015N85LL, NCEP015NH30AGU, NCEP015NH30AQU, NCEP015NH30GU, NCEP018NH30QU, NCEP023NH85AGU, NCEP023NH85GU, NCEP1580F
Keywords - NCEP014NH60GU MOSFET specs
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