NCEP015NH30AQU PDF and Equivalents Search

 

NCEP015NH30AQU Specs and Replacement

Type Designator: NCEP015NH30AQU

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 174 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 830 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm

Package: PDFN3.3X3.3-8L

NCEP015NH30AQU substitution

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NCEP015NH30AQU datasheet

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NCEP015NH30AQU

NCEP015NH30AQU http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description The NCEP015NH30AQU uses Super Trench III technology General Features that is uniquely optimized to provide the most efficient high V =30V,I =174A DS D frequency switching performance. Both conduction and R =1.4m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to a... See More ⇒

 2.1. Size:829K  ncepower
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NCEP015NH30AQU

NCEP015NH30AGU http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description The NCEP015NH30AGU uses Super Trench III technology General Features that is uniquely optimized to provide the most efficient high V =30V,I =180A DS D frequency switching performance. Both conduction and R =1.4m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to a... See More ⇒

 3.1. Size:1032K  ncepower
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NCEP015NH30AQU

NCEP015NH30GU http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP015NH30GU uses Super Trench III technology V =30V,I =189A DS D that is uniquely optimized to provide the most efficient high R =1.25m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =1.7m (typical) @ V =4.5V DS(ON) GS swi... See More ⇒

 6.1. Size:347K  ncepower
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NCEP015NH30AQU

http //www.ncepower.com NCEP015N30GU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =30V,ID =170A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.3m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=1.9m (typical) @ ... See More ⇒

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Detailed specifications: NCEAP4075GU , NCEAP60P90AK , NCEP008NH40ASL , NCEP008NH40SL , NCEP013NH40GU , NCEP014NH60GU , NCEP015N85LL , NCEP015NH30AGU , AO3400 , NCEP015NH30GU , NCEP018NH30QU , NCEP023NH85AGU , NCEP023NH85GU , NCEP1580F , NCEP40ND80G , NCEP40T14A , NCEP60ND30AG .

History: IRF9610S | 2SK3147L

Keywords - NCEP015NH30AQU MOSFET specs

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