NCEP1580F MOSFET. Datasheet pdf. Equivalent
Type Designator: NCEP1580F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 42 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 44.1 nC
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 382 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
Package: TO-220F
NCEP1580F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCEP1580F Datasheet (PDF)
ncep1580f.pdf
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http://www.ncepower.com NCEP1580FNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP1580F uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switching
ncep1580gu.pdf
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http://www.ncepower.com NCEP1580GUNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP1580GU uses Super Trench technology that isV =150V,I =80ADS Duniquely optimized to provide the most efficient highR =12.0m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andExcellent gate charge x R product(FOM)DS(on)switching
ncep1580d.pdf
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http://www.ncepower.com NCEP1580DNCE N-Channel Super Trench Power MOSFET Description The NCEP1580D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch
ncep1580.pdf
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http://www.ncepower.com NCEP1580NCE N-Channel Super Trench Power MOSFET Description The NCEP1580 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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