All MOSFET. BL10N40-P Datasheet

 

BL10N40-P MOSFET. Datasheet pdf. Equivalent


   Type Designator: BL10N40-P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 114 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24.5 nC
   trⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 126 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.46 Ohm
   Package: TO-220

 BL10N40-P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BL10N40-P Datasheet (PDF)

 ..1. Size:1123K  belling
 bl10n40-p bl10n40-a bl10n40-u bl10n40-d.pdf

BL10N40-P BL10N40-P

BL10N40 Power MOSFET 1Description Step-Down Converter BL10N40, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

 9.1. Size:120K  international rectifier
 irfbl10n60a.pdf

BL10N40-P BL10N40-P

PD - 91819CSMPS MOSFETIRFBL10N60AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 600V 0.61 11A High Speed Power SwitchingBenefits Low Gate Charge Qg results in simpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Cu

 9.2. Size:441K  jilin sino
 bl10n15a bl10p15a.pdf

BL10N40-P BL10N40-P

DARLINGTON COMPLEMENTARY POWER TRANSISTORS RBL10N15A BL10P15A APPLICATIONS Audio Series Regulator General Purpose FEATURES High current capability High reliability RoHS

 9.3. Size:1506K  belling
 bl10n80-p bl10n80-a bl10n80-w bl10n80-f.pdf

BL10N40-P BL10N40-P

BL10N80 Power MOSFET 1Description Step-Down Converter BL10N80, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

 9.4. Size:909K  belling
 bl10n70a-p bl10n70a-a.pdf

BL10N40-P BL10N40-P

BL10N70A Power MOSFET 1Description Step-Down Converter BL10N70A, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS

 9.5. Size:539K  belling
 bl10n60-p bl10n60-a.pdf

BL10N40-P BL10N40-P

BL10N60 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1Description BL10N60, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application

 9.6. Size:1134K  belling
 bl10n70-p bl10n70-a.pdf

BL10N40-P BL10N40-P

BL10N70 Power MOSFET 1Description Step-Down Converter BL10N70, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

 9.7. Size:1050K  belling
 bl10n65a-p bl10n65a-a.pdf

BL10N40-P BL10N40-P

BL10N65A Power MOSFET 1Description Step-Down Converter BL10N65A, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS

 9.8. Size:538K  belling
 bl10n60a-p bl10n60a-a.pdf

BL10N40-P BL10N40-P

BL10N60A Power MOSFET Power MOSFETPower MOSFETPower MOSFET1Description BL10N60A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicati

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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