BL10N60-A Specs and Replacement

Type Designator: BL10N60-A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO-220F

BL10N60-A substitution

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BL10N60-A datasheet

 ..1. Size:539K  belling
 bl10n60-p bl10n60-a.pdf pdf_icon

BL10N60-A

BL10N60 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL10N60, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application... See More ⇒

 7.1. Size:120K  international rectifier
 irfbl10n60a.pdf pdf_icon

BL10N60-A

PD - 91819C SMPS MOSFET IRFBL10N60A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 600V 0.61 11A High Speed Power Switching Benefits Low Gate Charge Qg results in simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Cu... See More ⇒

 7.2. Size:538K  belling
 bl10n60a-p bl10n60a-a.pdf pdf_icon

BL10N60-A

BL10N60A Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL10N60A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicati... See More ⇒

 8.1. Size:1050K  belling
 bl10n65a-p bl10n65a-a.pdf pdf_icon

BL10N60-A

BL10N65A Power MOSFET 1 Description Step-Down Converter BL10N65A, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS ... See More ⇒

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Detailed specifications: NCES075R026T4, NCES120P035T4, NCES120P075T4, NCES120R018T4, BL10N40-A, BL10N40-D, BL10N40-P, BL10N40-U, IRLB4132, BL10N60A-A, BL10N60A-P, BL10N60-P, BL10N65A-A, BL10N65A-P, BL10N70-A, BL10N70A-A, BL10N70A-P

Keywords - BL10N60-A MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.