All MOSFET. BL10N60A-A Datasheet

 

BL10N60A-A MOSFET. Datasheet pdf. Equivalent


   Type Designator: BL10N60A-A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 29 nC
   trⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO-220F

 BL10N60A-A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BL10N60A-A Datasheet (PDF)

 ..1. Size:538K  belling
 bl10n60a-p bl10n60a-a.pdf

BL10N60A-A BL10N60A-A

BL10N60A Power MOSFET Power MOSFETPower MOSFETPower MOSFET1Description BL10N60A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicati

 6.1. Size:120K  international rectifier
 irfbl10n60a.pdf

BL10N60A-A BL10N60A-A

PD - 91819CSMPS MOSFETIRFBL10N60AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 600V 0.61 11A High Speed Power SwitchingBenefits Low Gate Charge Qg results in simpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Cu

 7.1. Size:539K  belling
 bl10n60-p bl10n60-a.pdf

BL10N60A-A BL10N60A-A

BL10N60 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1Description BL10N60, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application

 8.1. Size:1050K  belling
 bl10n65a-p bl10n65a-a.pdf

BL10N60A-A BL10N60A-A

BL10N65A Power MOSFET 1Description Step-Down Converter BL10N65A, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top