All MOSFET. FDS4480 Datasheet

 

FDS4480 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDS4480

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.5 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 10.8 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 41 nC

Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm

Package: SO8

FDS4480 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDS4480 Datasheet (PDF)

0.1. fds4480.pdf Size:144K _fairchild_semi

FDS4480
FDS4480

May 2013FDS4480 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 10.8 A, 40 V. RDS(ON) = 12 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional Low gate charge (29 nC) switching PWM controllers. It has been optimized for low gate char

8.1. fds4488.pdf Size:69K _fairchild_semi

FDS4480
FDS4480

December 2001 FDS4488 30V N-Channel PowerTrench MOSFET General Description Features This N MOSFET is produced using Fairchild -Channel 7.9 A, 30 V. R = 22 m @ V = 10 V DS(ON) GSSemiconductors advanced PowerTrench process that R = 30 m @ V = 4.5 V DS(ON) GShas been especially tailored to minimize on-state resistance and yet maintain superior switching

 9.1. fds4410.pdf Size:110K _fairchild_semi

FDS4480
FDS4480

April 1998 FDS4410 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET General Description FeaturesThis N-Channel Logic Level MOSFET has been designed10 A, 30 V. RDS(ON) = 0.0135 @ VGS = 10 V specifically to improve the overall efficiency of DC/DCRDS(ON) = 0.0200 @ VGS = 4.5 V.converters using either synchronous or conventional switching PWM controllers.O

9.2. fds4410a.pdf Size:112K _fairchild_semi

FDS4480
FDS4480

May 2005FDS4410ASingle N-Channel, Logic-Level, PowerTrench MOSFETFeatures General Description 10 A, 30 V. RDS(ON) = 13.5 m @ VGS = 10 V This N-Channel Logic Level MOSFET is produced using Fair-RDS(ON) = 20 m @ VGS = 4.5 V child Semiconductors advanced PowerTrench process that hasbeen especially tailored to minimize the on-state resistance and Fast switching speed

 9.3. fds4465.pdf Size:137K _fairchild_semi

FDS4480
FDS4480

March 2003 FDS4465 P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged 13.5 A, 20 V. RDS(ON) = 8.5 m @ VGS = 4.5 V gate version of Fairchild Semiconductors advanced RDS(ON) = 10.5 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power RDS(ON) = 14 m

9.4. fds4470.pdf Size:146K _fairchild_semi

FDS4480
FDS4480

December 2006 FDS4470 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 12.5 A, 40 V. RDS(ON) = 9 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional Low gate charge (45 nC) switching PWM controllers. It has been optimized for low gate charge

 9.5. fds4435bz.pdf Size:225K _fairchild_semi

FDS4480
FDS4480

April 2009FDS4435BZP-Channel PowerTrench MOSFET -30V, -8.8A, 20m Features General Description Max rDS(on) = 20m at VGS = -10V, ID = -8.8A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A Semiconductors advanced PowerTrench process that has Extended VGSS range (-25V) for battery applications been especially tailored to minimi

9.6. fds4435.pdf Size:64K _fairchild_semi

FDS4480
FDS4480

October 2001 FDS4435 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 8.8 A, 30 V R = 20 m @ V = 10 V DS(ON) GSFairchild Semiconductors advanced PowerTrench R = 35 m @ V = 4.5 V DS(ON) GSprocess. It has been optimized for power management applications requiring a wide range of gave

9.7. fds4465 f085.pdf Size:400K _fairchild_semi

FDS4480
FDS4480

February 2010tmFDS4465_F085 P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged 13.5 A, 20 V. RDS(ON) = 8.5 m @ VGS = 4.5 V gate version of Fairchild Semiconductors advanced RDS(ON) = 10.5 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power RDS(

9.8. fds4435a.pdf Size:172K _fairchild_semi

FDS4480
FDS4480

October 2001FDS4435AP-Channel Logic Level PowerTrench MOSFET General DescriptionFeaturesThis P-Channel Logic Level MOSFET is produced using -9 A, -30 V. RDS(ON) = 0.017 W @ VGS = -10 VFairchild Semiconductors advanced PowerTrench processRDS(ON) = 0.025 W @ VGS = -4.5 Vthat has been especially tailored to minimize the on-stateresistance and yet maintain low gate charg

9.9. fds4435bz f085.pdf Size:296K _fairchild_semi

FDS4480
FDS4480

July 2009FDS4435BZ_F085P-Channel PowerTrench MOSFET -30V, -8.8A, 20m Features General Description Max rDS(on) = 20m at VGS = -10V, ID = -8.8A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A Semiconductors advanced PowerTrench process that has Extended VGSS range (-25V) for battery applications been especially tailored to mi

Datasheet: FQD7N30 , FQD7P06 , FQD7P20 , FQD8P10 , FQD8P10TM_F085 , FQD9N25 , FQD9N25TM_F085 , FQH44N10 , IRF840 , FQH8N100C , FQI13N50C , FQI27N25 , FQI27N25TU_F085 , FQI4N80 , IRFW630B , FQI4N90 , FQI50N06 .

 

 
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