BL12N60-P Specs and Replacement
Type Designator: BL12N60-P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 201 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 180 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO-220
BL12N60-P substitution
- MOSFET ⓘ Cross-Reference Search
BL12N60-P datasheet
bl12n60-p bl12n60-a.pdf
BL12N60 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL12N60, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application... See More ⇒
bl12n60a-p bl12n60a-a.pdf
12N60A Power MOSFET 1 Description Step-Down Converter BL12N60A, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Par... See More ⇒
bl12n65-p bl12n65-a.pdf
BL12N65 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL12N65, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application... See More ⇒
bl12n65a-p bl12n65a-a.pdf
BL12N65A Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL12N65A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicati... See More ⇒
Detailed specifications: BL10N70-P, BL10N80-A, BL10N80-F, BL10N80-P, BL10N80-W, BL12N60-A, BL12N60A-A, BL12N60A-P, NCEP15T14, BL12N65-A, BL12N65A-A, BL12N65A-P, BL12N65-P, BL12N70-A, BL12N70-P, BL13N25-A, BL13N25-D
Keywords - BL12N60-P MOSFET specs
BL12N60-P cross reference
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BL12N60-P replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: YJL2312A
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