BL12N65-P MOSFET. Datasheet pdf. Equivalent
Type Designator: BL12N65-P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 228 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 49 nC
trⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 176 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm
Package: TO-220
BL12N65-P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BL12N65-P Datasheet (PDF)
bl12n65-p bl12n65-a.pdf
BL12N65 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1Description BL12N65, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application
bl12n65a-p bl12n65a-a.pdf
BL12N65A Power MOSFET Power MOSFETPower MOSFETPower MOSFET1Description BL12N65A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicati
bl12n60-p bl12n60-a.pdf
BL12N60 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1Description BL12N60, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application
bl12n60a-p bl12n60a-a.pdf
12N60A Power MOSFET 1Description Step-Down Converter BL12N60A, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Par
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100