BL12N70-A Specs and Replacement
Type Designator: BL12N70-A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 190 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: TO-220F
BL12N70-A substitution
- MOSFET ⓘ Cross-Reference Search
BL12N70-A datasheet
bl12n70-p bl12n70-a.pdf
BL12N70 Power MOSFET 1 Description Step-Down Converter BL12N70, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Par... See More ⇒
irfbl12n50a.pdf
PD - 91818A SMPS MOSFET IRFBL12N50A HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.45 13A High Speed Power Switching Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Super-D2PakTM Avalanche V... See More ⇒
bl12n65-p bl12n65-a.pdf
BL12N65 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL12N65, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application... See More ⇒
bl12n60-p bl12n60-a.pdf
BL12N60 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL12N60, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application... See More ⇒
Detailed specifications: BL12N60-A , BL12N60A-A , BL12N60A-P , BL12N60-P , BL12N65-A , BL12N65A-A , BL12N65A-P , BL12N65-P , AO4407 , BL12N70-P , BL13N25-A , BL13N25-D , BL13N25L-A , BL13N25L-D , BL13N25L-P , BL13N25L-U , BL13N25-P .
Keywords - BL12N70-A MOSFET specs
BL12N70-A cross reference
BL12N70-A equivalent finder
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BL12N70-A substitution
BL12N70-A replacement
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