BL12N70-A
MOSFET. Datasheet pdf. Equivalent
Type Designator: BL12N70-A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 52
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 12
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 49.5
nC
trⓘ - Rise Time: 110
nS
Cossⓘ -
Output Capacitance: 190
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.7
Ohm
Package:
TO-220F
BL12N70-A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BL12N70-A
Datasheet (PDF)
..1. Size:1038K belling
bl12n70-p bl12n70-a.pdf 
BL12N70 Power MOSFET 1Description Step-Down Converter BL12N70, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Par
9.1. Size:175K international rectifier
irfbl12n50a.pdf
PD - 91818ASMPS MOSFETIRFBL12N50AHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.45 13A High Speed Power SwitchingBenefits Low Gate Charge Qg Results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andSuper-D2PakTMAvalanche V
9.2. Size:539K belling
bl12n65-p bl12n65-a.pdf
BL12N65 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1Description BL12N65, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application
9.3. Size:538K belling
bl12n60-p bl12n60-a.pdf
BL12N60 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1Description BL12N60, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application
9.4. Size:981K belling
bl12n60a-p bl12n60a-a.pdf
12N60A Power MOSFET 1Description Step-Down Converter BL12N60A, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Par
9.5. Size:541K belling
bl12n65a-p bl12n65a-a.pdf
BL12N65A Power MOSFET Power MOSFETPower MOSFETPower MOSFET1Description BL12N65A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicati
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