All MOSFET. FQI27N25 Datasheet

 

FQI27N25 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQI27N25

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 180 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 25.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 50 nC

Maximum Drain-Source On-State Resistance (Rds): 0.11 Ohm

Package: TO262, I2PAK

FQI27N25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQI27N25 Datasheet (PDF)

0.1. fqi27n25tu f085.pdf Size:1099K _fairchild_semi

FQI27N25
FQI27N25

April 2010 tm FQI27N25TU_F085 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 25.5A, 250V, RDS(on) = 0.11Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 50 nC) planar stripe, DMOS technology. • Low Crss ( typical 45 pF) This advanced technology has been especially tailo

0.2. fqb27n25tm am002 fqi27n25tu fqi27n25 fqb27n25.pdf Size:814K _fairchild_semi

FQI27N25
FQI27N25

May 2000 TM QFET QFET QFET QFET FQB27N25 / FQI27N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 25.5A, 250V, RDS(on) = 0.11Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 50 nC) planar stripe, DMOS technology. • Low Crss ( typical 45 pF) This advanced technology

 9.1. fqb27p06tm fqi27p06tu.pdf Size:1071K _fairchild_semi

FQI27N25
FQI27N25

October 2008 QFET® FQB27P06 / FQI27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -27A, -60V, RDS(on) = 0.07Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 33 nC) planar stripe, DMOS technology. • Low Crss ( typical 120 pF) This advanced technology has been especia

9.2. fqb27p06 fqi27p06.pdf Size:1119K _fairchild_semi

FQI27N25
FQI27N25

October 2008 QFET® FQB27P06 / FQI27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -27A, -60V, RDS(on) = 0.07Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 33 nC) planar stripe, DMOS technology. • Low Crss ( typical 120 pF) This advanced technology has been especia

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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