BL18N20-A MOSFET Datasheet: N-Ch, 200V, 18A. Full specification with pinout and replacement list

BL18N20-A Specs and Replacement

Type Designator: BL18N20-A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 52 nS

Cossⓘ - Output Capacitance: 450 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO-220F

BL18N20-A substitution

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BL18N20-A datasheet

..1. Size:1586K belling
bl18n20-p bl18n20-a bl18n20-u bl18n20-d.pdf pdf_icon

BL18N20 Power MOSFET 1 Description Step-Down Converter BL18N20, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa... See More ⇒

9.1. Size:29K international rectifier
irfbl18n50k.pdf pdf_icon

PD- 93928 PROVISIONAL IRFBL18N50K SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) ID Telecom and Data-Com off-Line SMPS UninterruptIble Power Supply 500V 0.25 18A Benefits Low On-Resistance High Speed Switching Low Gate Drive Current Due to Improved Gate Charge Characteristics Improved Avalanche Ruggedness and Dynamic dv/dt, Fully Characterized Avalanche Vo... See More ⇒

Detailed specifications: BL13N50-P , BL15N25-A , BL15N25-D , BL15N25-P , BL15N25-U , BL15N50-A , BL15N50-F , BL15N50-P , P60NF06 , BL18N20-D , BL18N20-P , BL18N20-U , BL19N40-A , BL19N40-P , BL20N50-A , BL20N50-K , BL20N50-P .