All MOSFET. BL18N20-D Datasheet

 

BL18N20-D Datasheet and Replacement


   Type Designator: BL18N20-D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 52 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO-252
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BL18N20-D Datasheet (PDF)

 ..1. Size:1586K  belling
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BL18N20-D

BL18N20 Power MOSFET 1Description Step-Down Converter BL18N20, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

 9.1. Size:29K  international rectifier
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BL18N20-D

PD- 93928PROVISIONALIRFBL18N50KSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) ID Telecom and Data-Com off-Line SMPS UninterruptIble Power Supply500V 0.25 18ABenefits Low On-Resistance High Speed Switching Low Gate Drive Current Due to ImprovedGate Charge Characteristics Improved Avalanche Ruggedness andDynamic dv/dt, Fully CharacterizedAvalanche Vo

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SI8401DB | SSW65R190S2 | SM4186T9RL | SRT10N160LD | APT10021JFLL | NCE30P12BS | NP180N04TUJ

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