BL18N20-D Specs and Replacement

Type Designator: BL18N20-D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 52 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO-252

BL18N20-D substitution

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BL18N20-D datasheet

 ..1. Size:1586K  belling
 bl18n20-p bl18n20-a bl18n20-u bl18n20-d.pdf pdf_icon

BL18N20-D

BL18N20 Power MOSFET 1 Description Step-Down Converter BL18N20, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa... See More ⇒

 9.1. Size:29K  international rectifier
 irfbl18n50k.pdf pdf_icon

BL18N20-D

PD- 93928 PROVISIONAL IRFBL18N50K SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) ID Telecom and Data-Com off-Line SMPS UninterruptIble Power Supply 500V 0.25 18A Benefits Low On-Resistance High Speed Switching Low Gate Drive Current Due to Improved Gate Charge Characteristics Improved Avalanche Ruggedness and Dynamic dv/dt, Fully Characterized Avalanche Vo... See More ⇒

Detailed specifications: BL15N25-A, BL15N25-D, BL15N25-P, BL15N25-U, BL15N50-A, BL15N50-F, BL15N50-P, BL18N20-A, 75N75, BL18N20-P, BL18N20-U, BL19N40-A, BL19N40-P, BL20N50-A, BL20N50-K, BL20N50-P, BL20N50-W

Keywords - BL18N20-D MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs