BL19N40-P Specs and Replacement

Type Designator: BL19N40-P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 278 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm

Package: TO-220

BL19N40-P substitution

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BL19N40-P datasheet

 ..1. Size:1048K  belling
 bl19n40-p bl19n40-a.pdf pdf_icon

BL19N40-P

BL19N40 Power MOSFET 1 Description Step-Down Converter BL19N40, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Par... See More ⇒

Detailed specifications: BL15N50-A, BL15N50-F, BL15N50-P, BL18N20-A, BL18N20-D, BL18N20-P, BL18N20-U, BL19N40-A, IRF1405, BL20N50-A, BL20N50-K, BL20N50-P, BL20N50-W, BL20N60-A, BL20N60-F, BL20N60-P, BL20N60-W

Keywords - BL19N40-P MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs