BL20N60-F Datasheet and Replacement
Type Designator: BL20N60-F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 255 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO-247
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BL20N60-F Datasheet (PDF)
bl20n60-p bl20n60-a bl20n60-w bl20n60-f.pdf

BL20N60 Power MOSFET 1Description Step-Down Converter BL20N60, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa
bl20n65-p bl20n65-a bl20n65-w bl20n65-f.pdf

BL20N65 Power MOSFET 1Description Step-Down Converter BL20N65, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa
ixbl20n300c.pdf

Advance Technical InformationHigh Voltage,VCES = 3000VIXBL20N300CHigh Frequency,IC110 = 20ABiMOSFETTM MonolithicVCE(sat) 6.0VBipolar MOS Transistor(Electrically Isolated Tab)ISOPLUS i5-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VGVCGR TJ = 25C to 150C, RGE = 1M 3000 V EC Isolated TabVGES Continuous
bl20n50-p bl20n50-a bl20n50-w bl20n50-k.pdf

BL20N50 Power MOSFET 1Description BL20N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 500
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: NVB190N65S3F | DMNH10H028SCT | WML11N80M3 | UPA603CT | AON7422L | DMN3030LSS | IRLS4030
Keywords - BL20N60-F MOSFET datasheet
BL20N60-F cross reference
BL20N60-F equivalent finder
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History: NVB190N65S3F | DMNH10H028SCT | WML11N80M3 | UPA603CT | AON7422L | DMN3030LSS | IRLS4030



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