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BL20N65-A Spec and Replacement


   Type Designator: BL20N65-A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 62 nC
   tr ⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.46 Ohm
   Package: TO-220F

 BL20N65-A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BL20N65-A Specs

 ..1. Size:923K  belling
 bl20n65-p bl20n65-a bl20n65-w bl20n65-f.pdf pdf_icon

BL20N65-A

BL20N65 Power MOSFET 1 Description Step-Down Converter BL20N65, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa... See More ⇒

 8.1. Size:1053K  belling
 bl20n60-p bl20n60-a bl20n60-w bl20n60-f.pdf pdf_icon

BL20N65-A

BL20N60 Power MOSFET 1 Description Step-Down Converter BL20N60, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa... See More ⇒

 9.1. Size:197K  ixys
 ixbl20n300c.pdf pdf_icon

BL20N65-A

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 9.2. Size:1563K  belling
 bl20n50-p bl20n50-a bl20n50-w bl20n50-k.pdf pdf_icon

BL20N65-A

BL20N50 Power MOSFET 1 Description BL20N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 500 ... See More ⇒

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Detailed specifications: BL20N50-A , BL20N50-K , BL20N50-P , BL20N50-W , BL20N60-A , BL20N60-F , BL20N60-P , BL20N60-W , K2611 , BL20N65-F , BL20N65-P , BL20N65-W , BL23N50-A , BL23N50-K , BL23N50-P , BL23N50-W , BL25N40-A .

Keywords - BL20N65-A MOSFET specs

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