BL25N40-P Datasheet and Replacement
Type Designator: BL25N40-P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 260 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 56 nC
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 330 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO-220
BL25N40-P substitution
BL25N40-P Datasheet (PDF)
bl25n40-p bl25n40-a bl25n40-w bl25n40-f.pdf

BL25N40 Power MOSFET 1Description Step-Down Converter BL25N40, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa
bl25n50-w bl25n50-f.pdf

BL25N50 Power MOSFET Power MOSFETPower MOSFETPower MOSFET 1 Description BL25N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicati
bl25n60-w bl25n60-f.pdf

BL25N60 Power MOSFET 1Description BL25N60, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 600
bl25n65-w bl25n65-f.pdf

BL25N65 Power MOSFET Power MOSFETPower MOSFETPower MOSFET 1 Description BL25N65, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applica
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: P1504HV | CHM4892JGP
Keywords - BL25N40-P MOSFET datasheet
BL25N40-P cross reference
BL25N40-P equivalent finder
BL25N40-P lookup
BL25N40-P substitution
BL25N40-P replacement
History: P1504HV | CHM4892JGP



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