BL25N50-W MOSFET Datasheet: N-Ch, 500V, 25A. Full specification with pinout and replacement list

BL25N50-W Specs and Replacement

Type Designator: BL25N50-W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 320 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 350 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm

Package: TO-3PN

BL25N50-W substitution

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BL25N50-W datasheet

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BL25N50 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL25N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicati... See More ⇒

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BL25N40 Power MOSFET 1 Description Step-Down Converter BL25N40, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa... See More ⇒

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BL25N60 Power MOSFET 1 Description BL25N60, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 600 ... See More ⇒

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BL25N65 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL25N65, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applica... See More ⇒

Detailed specifications: BL23N50-K , BL23N50-P , BL23N50-W , BL25N40-A , BL25N40-F , BL25N40-P , BL25N40-W , BL25N50-F , IRF840 , BL25N60-F , BL25N60-W , BL25N65-F , BL25N65-W , BL2N50-A , BL2N50-D , BL2N50-P , BL2N50-U .