BL2N60-P Spec and Replacement
Type Designator: BL2N60-P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 33 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: TO-220
BL2N60-P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BL2N60-P Specs
bl2n60-p bl2n60-a bl2n60-u bl2n60-d.pdf
BL2N60 Power MOSFET 1 Description Step-Down Converter BL2N60, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Para... See More ⇒
Detailed specifications: BL25N65-F , BL25N65-W , BL2N50-A , BL2N50-D , BL2N50-P , BL2N50-U , BL2N60-A , BL2N60-D , IRF640N , BL2N60-U , BL30N30-A , BL30N30-B , BL30N30-P , BL30N50-F , BL30N50-W , BL30N60-F , BL30N60-W .
History: IXFR16N120P | BL30N30-B
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