BL30N30-P MOSFET Datasheet: N-Ch, 300V, 30A. Full specification with pinout and replacement list

BL30N30-P Specs and Replacement

Type Designator: BL30N30-P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 270 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: TO-220

BL30N30-P substitution

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BL30N30-P datasheet

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BL30N30 Power MOSFET 1 Description Step-Down Converter BL30N30, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa... See More ⇒

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BL30N50 Power MOSFET 1 Description BL30N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 500 ... See More ⇒

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BL30N60 Power MOSFET 1 Description Step-Down Converter BL30N60, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Par... See More ⇒

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BL30N65 Power MOSFET 1 Description Step-Down Converter BL30N65, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa... See More ⇒

Detailed specifications: BL2N50-P , BL2N50-U , BL2N60-A , BL2N60-D , BL2N60-P , BL2N60-U , BL30N30-A , BL30N30-B , IRF3710 , BL30N50-F , BL30N50-W , BL30N60-F , BL30N60-W , BL30N65-F , BL30N65-W , BL33N25-A , BL33N25-P .