BL30N50-F Datasheet. Specs and Replacement

Type Designator: BL30N50-F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 320 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

Cossⓘ - Output Capacitance: 750 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: TO-247

  📄📄 Copy 

BL30N50-F substitution

- MOSFET ⓘ Cross-Reference Search

 

BL30N50-F datasheet

 ..1. Size:1368K  belling
 bl30n50-w bl30n50-f.pdf pdf_icon

BL30N50-F

BL30N50 Power MOSFET 1 Description BL30N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 500 ... See More ⇒

 9.1. Size:1425K  belling
 bl30n60-w bl30n60-f.pdf pdf_icon

BL30N50-F

BL30N60 Power MOSFET 1 Description Step-Down Converter BL30N60, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Par... See More ⇒

 9.2. Size:1408K  belling
 bl30n65-f bl30n65-w.pdf pdf_icon

BL30N50-F

BL30N65 Power MOSFET 1 Description Step-Down Converter BL30N65, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa... See More ⇒

 9.3. Size:1115K  belling
 bl30n30-p bl30n30-a bl30n30-b.pdf pdf_icon

BL30N50-F

BL30N30 Power MOSFET 1 Description Step-Down Converter BL30N30, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa... See More ⇒

SHOW MORE

Detailed specifications: BL2N50-U, BL2N60-A, BL2N60-D, BL2N60-P, BL2N60-U, BL30N30-A, BL30N30-B, BL30N30-P, 10N60, BL30N50-W, BL30N60-F, BL30N60-W, BL30N65-F, BL30N65-W, BL33N25-A, BL33N25-P, BL3N100-A

Keywords - BL30N50-F MOSFET specs

 BL30N50-F cross reference

 BL30N50-F equivalent finder

 BL30N50-F pdf lookup

 BL30N50-F substitution

 BL30N50-F replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.