BL3N105-A Spec and Replacement
Type Designator: BL3N105-A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 47 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1050 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 68 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
Package: TO-220F
BL3N105-A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BL3N105-A Specs
bl3n105-p bl3n105-a bl3n105-u bl3n105-d.pdf
BL3N105 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL3N105, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicatio... See More ⇒
bl3n100e-p bl3n100e-a bl3n100e-u bl3n100e-d.pdf
BL3N100E Power MOSFET 1 Description Step-Down Converter BL3N100E, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS P... See More ⇒
bl3n100-p bl3n100-a bl3n100-u bl3n100-d.pdf
BL3N100 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL3N100, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicatio... See More ⇒
bl3n150-p bl3n150-a bl3n150-w bl3n150-k bl3n150-f bl3n150-b.pdf
BL3N150 Power MOSFET 1 Description Step-Down Converter BL3N150, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa... See More ⇒
Detailed specifications: BL3N100-A , BL3N100-D , BL3N100E-A , BL3N100E-D , BL3N100E-P , BL3N100E-U , BL3N100-P , BL3N100-U , IRLB4132 , BL3N105-D , BL3N105-P , BL3N105-U , BL3N150-A , BL3N150-B , BL3N150-F , BL3N150-K , BL3N150-P .
History: P8008BVA
Keywords - BL3N105-A MOSFET specs
BL3N105-A cross reference
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BL3N105-A replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: P8008BVA
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