All MOSFET. BL3N90E-U Datasheet

 

BL3N90E-U Datasheet and Replacement


   Type Designator: BL3N90E-U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 47 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
   Package: TO-251
 

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BL3N90E-U Datasheet (PDF)

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BL3N90E-U

BL3N90E Power MOSFET 1Description Step-Down Converter BL3N90E, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Par

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BL3N90E-U

BL3N90 Power MOSFET 1Description Step-Down Converter BL3N90, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Param

Datasheet: BL3N150-K , BL3N150-P , BL3N150-W , BL3N90-A , BL3N90-D , BL3N90E-A , BL3N90E-D , BL3N90E-P , AO4407 , BL3N90-P , BL3N90-U , BL40N25-F , BL40N25-W , BL40N30L-F , BL40N30L-W , BL4N150-A , BL4N150-B .

History: HY3312P | KI2300 | APTC60DAM18CTG | ELM56801EA | DMP6110SSD | EM6K7 | HUFA75829D3S

Keywords - BL3N90E-U MOSFET datasheet

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