All MOSFET. BL3N90-P Datasheet

 

BL3N90-P Datasheet and Replacement


   Type Designator: BL3N90-P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 47 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
   Package: TO-220
 

 BL3N90-P substitution

   - MOSFET ⓘ Cross-Reference Search

 

BL3N90-P Datasheet (PDF)

 ..1. Size:973K  belling
 bl3n90-p bl3n90-a bl3n90-u bl3n90-d.pdf pdf_icon

BL3N90-P

BL3N90 Power MOSFET 1Description Step-Down Converter BL3N90, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Param

 8.1. Size:965K  belling
 bl3n90e-p bl3n90e-a bl3n90e-u bl3n90e-d.pdf pdf_icon

BL3N90-P

BL3N90E Power MOSFET 1Description Step-Down Converter BL3N90E, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Par

Datasheet: BL3N150-P , BL3N150-W , BL3N90-A , BL3N90-D , BL3N90E-A , BL3N90E-D , BL3N90E-P , BL3N90E-U , IRLB4132 , BL3N90-U , BL40N25-F , BL40N25-W , BL40N30L-F , BL40N30L-W , BL4N150-A , BL4N150-B , BL4N150-F .

History: CTLM8110-M832D | HSS2306A

Keywords - BL3N90-P MOSFET datasheet

 BL3N90-P cross reference
 BL3N90-P equivalent finder
 BL3N90-P lookup
 BL3N90-P substitution
 BL3N90-P replacement

 

 
Back to Top

 


 
.