BL40N25-F Spec and Replacement
Type Designator: BL40N25-F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 310 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 620 nS
Cossⓘ - Output Capacitance: 360 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TO-247
BL40N25-F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BL40N25-F Specs
bl40n25-f bl40n25-w.pdf
BL40N25 Power MOSFET 1 Description Step-Down Converter BL40N25, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa... See More ⇒
bl40n30l-f bl40n30l-w.pdf
BL40N30L Power MOSFET 1 Description Step-Down Converter BL40N30L, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS ... See More ⇒
Detailed specifications: BL3N90-A , BL3N90-D , BL3N90E-A , BL3N90E-D , BL3N90E-P , BL3N90E-U , BL3N90-P , BL3N90-U , AON7506 , BL40N25-W , BL40N30L-F , BL40N30L-W , BL4N150-A , BL4N150-B , BL4N150-F , BL4N150-K , BL4N150-P .
Keywords - BL40N25-F MOSFET specs
BL40N25-F cross reference
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BL40N25-F replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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