All MOSFET. BL40N25-F Equivalents Search

 

BL40N25-F Spec and Replacement


   Type Designator: BL40N25-F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 310 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 620 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO-247

 BL40N25-F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BL40N25-F Specs

 ..1. Size:1413K  belling
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BL40N25-F

BL40N25 Power MOSFET 1 Description Step-Down Converter BL40N25, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa... See More ⇒

 9.1. Size:1416K  belling
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BL40N25-F

BL40N30L Power MOSFET 1 Description Step-Down Converter BL40N30L, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS ... See More ⇒

Detailed specifications: BL3N90-A , BL3N90-D , BL3N90E-A , BL3N90E-D , BL3N90E-P , BL3N90E-U , BL3N90-P , BL3N90-U , AON7506 , BL40N25-W , BL40N30L-F , BL40N30L-W , BL4N150-A , BL4N150-B , BL4N150-F , BL4N150-K , BL4N150-P .

Keywords - BL40N25-F MOSFET specs

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