All MOSFET. FQI8N60C Datasheet

 

FQI8N60C Datasheet and Replacement


   Type Designator: FQI8N60C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO262 I2PAK
 

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FQI8N60C Datasheet (PDF)

 ..1. Size:965K  fairchild semi
 fqb8n60c fqi8n60c fqi8n60ctu.pdf pdf_icon

FQI8N60C

October 2008QFETFQB8N60C / FQI8N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especiall

 ..2. Size:754K  onsemi
 fqb8n60c fqi8n60c.pdf pdf_icon

FQI8N60C

FQB8N60C / FQI8N60CN-Channel QFET MOSFET600 V, 7.5 A, 1.2 Features 7.5 A, 600 V, RDS(on) = 1.2 (Max.) @ VGS = 10 V,ID = 3.75 ADescription Low Gate Charge (Typ. 28 nC)This N-Channel enhancement mode power MOSFET is produced using ON Semiconductors proprietary planar Low Crss (Typ. 12 pF)stripe and DMOS technology. This advanced MOSFET technology has

Datasheet: FQI4N90 , FQI50N06 , FQI5N60C , IRF644B , FQI7N60 , IRF634B , FQI7N80 , FDC6392S , 7N65 , FDP047AN08A0 , FQL40N50 , FQL40N50F , FQN1N50C , FQN1N60C , FDP3652 , FQNL2N50B , FQP10N20C .

History: STP22NF03L

Keywords - FQI8N60C MOSFET datasheet

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