FQI8N60C MOSFET Datasheet: N-Ch, 600V, 7.5A. Full specification with pinout and replacement list

FQI8N60C Specs and Replacement

   Type Designator: FQI8N60C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO262 I2PAK

FQI8N60C substitution

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FQI8N60C datasheet

..1. Size:965K fairchild semi
fqb8n60c fqi8n60c fqi8n60ctu.pdf pdf_icon

October 2008 QFET FQB8N60C / FQI8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especiall... See More ⇒

..2. Size:754K onsemi
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FQB8N60C / FQI8N60C N-Channel QFET MOSFET 600 V, 7.5 A, 1.2 Features 7.5 A, 600 V, RDS(on) = 1.2 (Max.) @ VGS = 10 V, ID = 3.75 A Description Low Gate Charge (Typ. 28 nC) This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar Low Crss (Typ. 12 pF) stripe and DMOS technology. This advanced MOSFET technology has... See More ⇒

Detailed specifications: FQI4N90 , FQI50N06 , FQI5N60C , IRF644B , FQI7N60 , IRF634B , FQI7N80 , FDC6392S , 10N60 , FDP047AN08A0 , FQL40N50 , FQL40N50F , FQN1N50C , FQN1N60C , FDP3652 , FQNL2N50B , FQP10N20C .