2SK3140 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3140
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 125 nC
trⓘ - Rise Time: 250 nS
Cossⓘ - Output Capacitance: 1000 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO220F
2SK3140 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3140 Datasheet (PDF)
2sk3140.pdf
2SK3140 Silicon N Channel MOS FET High Speed Power Switching REJ03G1069-0500 (Previous: ADE-208-767C) Rev.5.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 6 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A(Package name: TO-220CFM)D1. Gate2. DrainG3. Source12
2sk3140.pdf
isc N-Channel MOSFET Transistor 2SK3140FEATURESDrain Current : I = 60A@ T =25D CDrain Source Voltage: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
rej03g1072 2sk3147lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3148.pdf
2SK3148 Silicon N Channel MOS FET High Speed Power Switching REJ03G1073-0200 (Previous: ADE-208-748) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS =45 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)DG1. Gate2. Drain3. Source1S23
2sk3141.pdf
2SK3141 Silicon N Channel MOS FET High Speed Power Switching REJ03G1070-0400 (Previous: ADE-208-680B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 4 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D1. Gate2. Drain(Flange)G3. Source
2sk3149.pdf
2SK3149 Silicon N Channel MOS FET High Speed Power Switching REJ03G1074-0400 (Previous: ADE-208-767C) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS =45 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D1. GateG2. Drain(Flange)3. Source1
rej03g1074 2sk3149ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1070 2sk3141ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1073 2sk3148ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3147.pdf
2SK3147(L), 2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1072-0200 (Previous: ADE-208-731) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS =0.1 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C(Package name: DPAK(L)-(
2sk3142.pdf
2SK3142Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-681A (Z)2nd. Edition Feb. 1999Features Low on-resistanceRDS(on) =4m typ. Low drive current 4V gate drive device can be driven from 5V sourceOutlineTO220CFMDG123 1. Gate2. Drain3. SourceS2SK3142Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to sour
2sk3148.pdf
2SK3148www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.034 at VGS = 10 V10050aCOMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersDTO-220 FULLPAKGSSDGN-Channel MOSFETABSOLUTE MAXIMU
2sk3147s.pdf
2SK3147Swww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS
2sk3148.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK3148FEATURESWith TO-220F packagingLow switching lossUltra low gate chargeEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsAC-DC convertersLED lightingUninterruptible power supplyABSOLUT
2sk3141.pdf
isc N-Channel MOSFET Transistor 2SK3141FEATURESDrain Current : I = 75A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =5 m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr
2sk3149.pdf
isc N-Channel MOSFET Transistor 2SK3149FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 60m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3147s.pdf
isc N-Channel MOSFET Transistor 2SK3147SFEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.13(Max)@VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk3147l.pdf
isc N-Channel MOSFET Transistor 2SK3147LFEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.13(Max)@VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk3142.pdf
isc N-Channel MOSFET Transistor 2SK3142FEATURESDrain Current : I = 60A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 5m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr
Datasheet: 2SK3070 , 2SK3080 , 2SK3081 , 2SK3082 , 2SK3133 , 2SK3134 , 2SK3135 , 2SK3136 , HY1906P , 2SK3141 , 2SK3142 , 2SK3147 , 2SK3148 , 2SK3149 , 2SK3150 , 2SK3151 , 2SK3152 .
