All MOSFET. BL7N65B-U Datasheet

 

BL7N65B-U MOSFET. Datasheet pdf. Equivalent


   Type Designator: BL7N65B-U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 148 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
   Package: TO-251

 BL7N65B-U Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BL7N65B-U Datasheet (PDF)

 ..1. Size:600K  belling
 bl7n65b-p bl7n65b-a bl7n65b-u bl7n65b-d.pdf

BL7N65B-U BL7N65B-U

BL7N65B Power MOSFET Power MOSFETPower MOSFETPower MOSFET1Description BL7N65B, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application

 8.1. Size:600K  belling
 bl7n65a-p bl7n65a-a bl7n65a-u bl7n65a-d.pdf

BL7N65B-U BL7N65B-U

BL7N65A Power MOSFET Power MOSFETPower MOSFETPower MOSFET1Description BL7N65A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application

 9.1. Size:598K  belling
 bl7n60a-p bl7n60a-a bl7n60a-u bl7n60a-d.pdf

BL7N65B-U BL7N65B-U

BL7N60A Power MOSFET Power MOSFETPower MOSFETPower MOSFET1Description BL7N60A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: 2SK2095N | IXTT68P20T | SKI10123 | SI8483DB

 

 
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