BL7N65B-U Specs and Replacement

Type Designator: BL7N65B-U

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 148 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm

Package: TO-251

BL7N65B-U substitution

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BL7N65B-U datasheet

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BL7N65B-U

BL7N65B Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL7N65B, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application... See More ⇒

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BL7N65B-U

BL7N65A Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL7N65A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application... See More ⇒

 9.1. Size:598K  belling
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BL7N65B-U

BL7N60A Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL7N60A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application... See More ⇒

Detailed specifications: BL7N60A-U, BL7N65A-A, BL7N65A-D, BL7N65A-P, BL7N65A-U, BL7N65B-A, BL7N65B-D, BL7N65B-P, IRFP250N, BL7N70-A, BL7N70A-A, BL7N70A-D, BL7N70A-P, BL7N70A-U, BL7N70-D, BL7N70-P, BL7N70-U

Keywords - BL7N65B-U MOSFET specs

 BL7N65B-U cross reference

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