FQN1N50C Datasheet. Specs and Replacement

Type Designator: FQN1N50C  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.38 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm

Package: TO92

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FQN1N50C datasheet

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FQN1N50C

January 2006 QFET FQN1N50C 500V N-Channel MOSFET Features Description 0.38 A, 500 V, RDS(on) = 6.0 @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 4.9 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typica... See More ⇒

 0.1. Size:1065K  fairchild semi
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FQN1N50C

January 2006 QFET FQN1N50C 500V N-Channel MOSFET Features Description 0.38 A, 500 V, RDS(on) = 6.0 @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 4.9 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typica... See More ⇒

 9.1. Size:682K  fairchild semi
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FQN1N50C

QFET FQN1N60C 600V N-Channel MOSFET Features Description 0.3 A, 600 V, RDS(on) = 11.5 @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 4.8 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typical 3.5 pF) minimi... See More ⇒

 9.2. Size:683K  fairchild semi
fqn1n60c.pdf pdf_icon

FQN1N50C

QFET FQN1N60C 600V N-Channel MOSFET Features Description 0.3 A, 600 V, RDS(on) = 11.5 @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 4.8 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typical 3.5 pF) minimi... See More ⇒

Detailed specifications: FQI7N60, IRF634B, FQI7N80, FDC6392S, FQI8N60C, FDP047AN08A0, FQL40N50, FQL40N50F, P55NF06, FQN1N60C, FDP3652, FQNL2N50B, FQP10N20C, FDB3652, FQP11N40C, FDP3632, FQP12P20

Keywords - FQN1N50C MOSFET specs

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