BL7N70A-U Datasheet and Replacement
Type Designator: BL7N70A-U
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 236 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 92 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO-251
BL7N70A-U substitution
BL7N70A-U Datasheet (PDF)
bl7n70a-d bl7n70a-u bl7n70a-p bl7n70a-a.pdf

BL7N70A Power MOSFET 1Description Step-Down Converter BL7N70A, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa
bl7n70-p bl7n70-a bl7n70-u bl7n70-d.pdf

BL7N70 Power MOSFET 1Description Step-Down Converter BL7N70, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Para
Datasheet: BL7N65B-A , BL7N65B-D , BL7N65B-P , BL7N65B-U , BL7N70-A , BL7N70A-A , BL7N70A-D , BL7N70A-P , 12N60 , BL7N70-D , BL7N70-P , BL7N70-U , BL7N80-A , BL7N80-B , BL7N80-I , BL7N80-P , BL7N80-W .
History: APT8014JLL | NTLUD3A260PZ | SIHF830 | GSM9435WS | VBZE20P03 | STD7NS20 | 2SK897-MR
Keywords - BL7N70A-U MOSFET datasheet
BL7N70A-U cross reference
BL7N70A-U equivalent finder
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BL7N70A-U substitution
BL7N70A-U replacement
History: APT8014JLL | NTLUD3A260PZ | SIHF830 | GSM9435WS | VBZE20P03 | STD7NS20 | 2SK897-MR



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