BL7N80-P MOSFET. Datasheet pdf. Equivalent
Type Designator: BL7N80-P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 145 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.2 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 31 nC
trⓘ - Rise Time: 68 nS
Cossⓘ - Output Capacitance: 118 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: TO-220
BL7N80-P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BL7N80-P Datasheet (PDF)
bl7n80-p bl7n80-a bl7n80-w bl7n80-i bl7n80-b.pdf
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BL7N80 Power MOSFET Power MOSFETPower MOSFETPower MOSFET 1 Description BL7N80, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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