BL80N20L-W Specs and Replacement

Type Designator: BL80N20L-W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 390 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

Cossⓘ - Output Capacitance: 968 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: TO-3PN

BL80N20L-W substitution

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BL80N20L-W datasheet

 ..1. Size:738K  belling
 bl80n20l-w bl80n20l-f.pdf pdf_icon

BL80N20L-W

BL80N20L Power MOSFET 1 Description Step-Down Converter BL80N20L, the silicon N-channel , Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS ... See More ⇒

 7.1. Size:507K  belling
 bl80n20-w bl80n20-f.pdf pdf_icon

BL80N20L-W

BL80N20 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL80N20, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicati... See More ⇒

Detailed specifications: BL7N70-U, BL7N80-A, BL7N80-B, BL7N80-I, BL7N80-P, BL7N80-W, BL80N20-F, BL80N20L-F, K4145, BL80N20-W, BL8N100-A, BL8N100-F, BL8N100-P, BL8N100-W, BL8N50-A, BL8N50-D, BL8N50-I

Keywords - BL80N20L-W MOSFET specs

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