All MOSFET. BL80N20L-W Datasheet

 

BL80N20L-W MOSFET. Datasheet pdf. Equivalent


   Type Designator: BL80N20L-W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 390 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 155 nC
   trⓘ - Rise Time: 250 nS
   Cossⓘ - Output Capacitance: 968 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: TO-3PN

 BL80N20L-W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BL80N20L-W Datasheet (PDF)

 ..1. Size:738K  belling
 bl80n20l-w bl80n20l-f.pdf

BL80N20L-W BL80N20L-W

BL80N20L Power MOSFET 1Description Step-Down Converter BL80N20L, the silicon N-channel , Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS

 7.1. Size:507K  belling
 bl80n20-w bl80n20-f.pdf

BL80N20L-W BL80N20L-W

BL80N20 Power MOSFET Power MOSFETPower MOSFETPower MOSFET 1 Description BL80N20, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicati

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History: KF2N60D | BUZ345 | STP45NE06 | MP4N60ER

 

 
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