FDP3652 PDF and Equivalents Search

 

FDP3652 Specs and Replacement

Type Designator: FDP3652

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 61 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO220

FDP3652 substitution

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FDP3652 datasheet

 ..1. Size:590K  fairchild semi
fdb3652 fdp3652.pdf pdf_icon

FDP3652

October 2013 FDP3652 / FDB3652 N-Channel PowerTrench MOSFET 100 V, 61 A, 16 m Applications Features rDS(on) = 14 m ( Typ.), VGS = 10 V, ID = 61 A Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Qg(tot) = 41 nC ( Typ.), VGS = 10 V Low Miller Charge Motor drives and Uninterruptible Power Supplies Low QRR Body Diode ... See More ⇒

 ..2. Size:263K  fairchild semi
fdb3652 fdp3652 fdi3652.pdf pdf_icon

FDP3652

October 2003 FDB3652 / FDP3652 / FDI3652 N-Channel PowerTrench MOSFET 100V, 61A, 16m Features Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A DC/DC Converters and Off-line UPS Qg(tot) = 41nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Syn... See More ⇒

 8.1. Size:644K  fairchild semi
fdp3651u.pdf pdf_icon

FDP3652

July 2006 FDP3651U N-Channel PowerTrench MOSFET 100V, 80A, 15m Features Applications rDS(on)=13 m (Typ.), VGS = 10V, ID = 40A DC/DC converters and Off-Line UPS Qg(TOT)=49 nc(Typ.), VGS = 10 V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Qrr Body Diode High Voltage Synchronous Rectifier ... See More ⇒

 8.2. Size:283K  inchange semiconductor
fdp3651u.pdf pdf_icon

FDP3652

isc N-Channel MOSFET Transistor FDP3651U FEATURES With TO-220 packaging Drain Source Voltage- V 100V DSS Static drain-source on-resistance RDS(on) 18m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ... See More ⇒

Detailed specifications: FQI7N80, FDC6392S, FQI8N60C, FDP047AN08A0, FQL40N50, FQL40N50F, FQN1N50C, FQN1N60C, 7N65, FQNL2N50B, FQP10N20C, FDB3652, FQP11N40C, FDP3632, FQP12P20, FQP13N06L, FQP13N10

Keywords - FDP3652 MOSFET specs

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