BL8N50-P Specs and Replacement

Type Designator: BL8N50-P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 112 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.88 Ohm

Package: TO-220

BL8N50-P substitution

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BL8N50-P datasheet

 ..1. Size:1034K  belling
 bl8n50-p bl8n50-a bl8n50-d bl8n50-i bl8n50-u.pdf pdf_icon

BL8N50-P

BL8N50 Power MOSFET 1 Description Step-Down Converter BL8N50, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Param... See More ⇒

Detailed specifications: BL80N20-W, BL8N100-A, BL8N100-F, BL8N100-P, BL8N100-W, BL8N50-A, BL8N50-D, BL8N50-I, CS150N03A8, BL8N50-U, BL8N60-A, BL8N60-D, BL8N60-P, BL8N60-U, BL90N25-F, BL90N25-W, BL9N20-A

Keywords - BL8N50-P MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.