BL8N60-D Specs and Replacement

Type Designator: BL8N60-D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 198 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.02 Ohm

Package: TO-252

BL8N60-D substitution

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BL8N60-D datasheet

 ..1. Size:1291K  belling
 bl8n60-p bl8n60-a bl8n60-d bl8n60-u.pdf pdf_icon

BL8N60-D

BL8N60 Power MOSFET 1 Description Step-Down Converter BL8N60, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Para... See More ⇒

Detailed specifications: BL8N100-P, BL8N100-W, BL8N50-A, BL8N50-D, BL8N50-I, BL8N50-P, BL8N50-U, BL8N60-A, STP80NF70, BL8N60-P, BL8N60-U, BL90N25-F, BL90N25-W, BL9N20-A, BL9N20-D, BL9N20-P, BL9N20-U

Keywords - BL8N60-D MOSFET specs

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