BL90N25-W Specs and Replacement

Type Designator: BL90N25-W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 830 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 174 nS

Cossⓘ - Output Capacitance: 930 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: TO-3PN

BL90N25-W substitution

- MOSFET ⓘ Cross-Reference Search

 

BL90N25-W datasheet

 ..1. Size:1407K  belling
 bl90n25-f bl90n25-w.pdf pdf_icon

BL90N25-W

BL90N25 Power MOSFET 1 Description Step-Down Converter BL90N25, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa... See More ⇒

Detailed specifications: BL8N50-I, BL8N50-P, BL8N50-U, BL8N60-A, BL8N60-D, BL8N60-P, BL8N60-U, BL90N25-F, BS170, BL9N20-A, BL9N20-D, BL9N20-P, BL9N20-U, BL9N50-A, BL9N50-D, BL9N50-P, BL9N50-U

Keywords - BL90N25-W MOSFET specs

 BL90N25-W cross reference

 BL90N25-W equivalent finder

 BL90N25-W pdf lookup

 BL90N25-W substitution

 BL90N25-W replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility