All MOSFET. BL9N20-A Datasheet

 

BL9N20-A Datasheet and Replacement


   Type Designator: BL9N20-A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
   Package: TO-220F
 

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BL9N20-A Datasheet (PDF)

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BL9N20-A

BL9N20 Power MOSFET Power MOSFETPower MOSFETPower MOSFET 1 Description BL9N20, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application

Datasheet: BL8N50-P , BL8N50-U , BL8N60-A , BL8N60-D , BL8N60-P , BL8N60-U , BL90N25-F , BL90N25-W , 10N65 , BL9N20-D , BL9N20-P , BL9N20-U , BL9N50-A , BL9N50-D , BL9N50-P , BL9N50-U , BL9N90-A .

History: AON6206 | IRFSL3107PBF | HMS21N60F

Keywords - BL9N20-A MOSFET datasheet

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