BL9N20-A Specs and Replacement

Type Designator: BL9N20-A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm

Package: TO-220F

BL9N20-A substitution

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BL9N20-A datasheet

 ..1. Size:603K  belling
 bl9n20-p bl9n20-a bl9n20-u bl9n20-d.pdf pdf_icon

BL9N20-A

BL9N20 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL9N20, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application... See More ⇒

Detailed specifications: BL8N50-P, BL8N50-U, BL8N60-A, BL8N60-D, BL8N60-P, BL8N60-U, BL90N25-F, BL90N25-W, 4N60, BL9N20-D, BL9N20-P, BL9N20-U, BL9N50-A, BL9N50-D, BL9N50-P, BL9N50-U, BL9N90-A

Keywords - BL9N20-A MOSFET specs

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