BL9N50-D Specs and Replacement

Type Designator: BL9N50-D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.72 Ohm

Package: TO-252

BL9N50-D substitution

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BL9N50-D datasheet

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BL9N50-D

BL9N50 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL9N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.... See More ⇒

Detailed specifications: BL8N60-U, BL90N25-F, BL90N25-W, BL9N20-A, BL9N20-D, BL9N20-P, BL9N20-U, BL9N50-A, 5N60, BL9N50-P, BL9N50-U, BL9N90-A, BL9N90-F, BL9N90-W, BLC75N120-BG, BLC75N120-F, BLC75N120-Z

Keywords - BL9N50-D MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.