All MOSFET. BL9N90-W Datasheet

 

BL9N90-W Datasheet and Replacement


   Type Designator: BL9N90-W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 103 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-3PN
 

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BL9N90-W Datasheet (PDF)

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BL9N90-W

BL9N90 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BL9N90, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications

Datasheet: BL9N20-P , BL9N20-U , BL9N50-A , BL9N50-D , BL9N50-P , BL9N50-U , BL9N90-A , BL9N90-F , 20N50 , BLC75N120-BG , BLC75N120-F , BLC75N120-Z , BLM03N03-D , BLM04N06-B , BLM04N06-P , BLM04N08-B , BLM04N08-P .

History: AONS66609T | IRF7815

Keywords - BL9N90-W MOSFET datasheet

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