BL9N90-W Specs and Replacement

Type Designator: BL9N90-W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 103 nS

Cossⓘ - Output Capacitance: 195 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO-3PN

BL9N90-W substitution

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BL9N90-W datasheet

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BL9N90-W

BL9N90 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL9N90, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications... See More ⇒

Detailed specifications: BL9N20-P, BL9N20-U, BL9N50-A, BL9N50-D, BL9N50-P, BL9N50-U, BL9N90-A, BL9N90-F, 20N50, BLC75N120-BG, BLC75N120-F, BLC75N120-Z, BLM03N03-D, BLM04N06-B, BLM04N06-P, BLM04N08-B, BLM04N08-P

Keywords - BL9N90-W MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs