BLM04N06-B Specs and Replacement

Type Designator: BLM04N06-B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 210 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 760 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: TO-263

BLM04N06-B substitution

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BLM04N06-B datasheet

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 blm04n06-p blm04n06-b.pdf pdf_icon

BLM04N06-B

Green Product BLM04N06 60V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM04N06 uses advanced trench technology to provide V = 60V,I = 150A DS D excellent R , low gate charge. It can be used in a wide DS(ON) R ... See More ⇒

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 blm04n08-p blm04n08-b.pdf pdf_icon

BLM04N06-B

Green Product BLM04N08 80V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM04N08 uses advanced trench technology to provide V = 80V,I = 200A DS D excellent R , low gate charge. It can be used in a wide DS(ON) R ... See More ⇒

Detailed specifications: BL9N50-U, BL9N90-A, BL9N90-F, BL9N90-W, BLC75N120-BG, BLC75N120-F, BLC75N120-Z, BLM03N03-D, 2N60, BLM04N06-P, BLM04N08-B, BLM04N08-P, BLM055N04-D, BLM05N03-D, BLM06N03-D, BLM06N10-B, BLM06N10-P

Keywords - BLM04N06-B MOSFET specs

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