BLM07N06-P
MOSFET. Datasheet pdf. Equivalent
Type Designator: BLM07N06-P
Marking Code: M07N06
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 143
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 95
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 80
nC
trⓘ - Rise Time: 36
nS
Cossⓘ -
Output Capacitance: 345
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007
Ohm
Package:
TO-220
BLM07N06-P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLM07N06-P
Datasheet (PDF)
..1. Size:1125K belling
blm07n06-p blm07n06-d.pdf
Green Product BLM07N06 60V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM07N06 uses advanced trench technology to provide V = 60V,I = 95A DS Dexcellent R , low gate charge. It can be used in a wide R
8.1. Size:919K belling
blm07n20-c.pdf
BLM07N20Power MOSFET1. DescriptionAdvantagesBLM07N20 uses advanced trench technology anddesign to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety ofapplications.Key CharacteristicsParameter Value UnitV 200 VDS@Tj.maxI 155 ADR 6.5 mDS(ON).TypFeatures High power and current handing capability Lead free product
9.1. Size:534K belling
blm075n04-d.pdf
BLM075N04 Power MOSFET 1Description Step-Down Converter The BLM075N04 uses advanced trench , technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V 40 V DSI 60 A DR .Typ 5.4 m DS(ON)@10V R .Typ 7.8 m DS(ON)@4.5V FEATURES Advanced Trench Technolog
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