BLM07N06-P Datasheet and Replacement
Type Designator: BLM07N06-P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 143 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 95 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 345 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO-220
BLM07N06-P substitution
BLM07N06-P Datasheet (PDF)
blm07n06-p blm07n06-d.pdf

Green Product BLM07N06 60V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM07N06 uses advanced trench technology to provide V = 60V,I = 95A DS Dexcellent R , low gate charge. It can be used in a wide R
blm07n20-c.pdf

BLM07N20Power MOSFET1. DescriptionAdvantagesBLM07N20 uses advanced trench technology anddesign to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety ofapplications.Key CharacteristicsParameter Value UnitV 200 VDS@Tj.maxI 155 ADR 6.5 mDS(ON).TypFeatures High power and current handing capability Lead free product
blm075n04-d.pdf

BLM075N04 Power MOSFET 1Description Step-Down Converter The BLM075N04 uses advanced trench , technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V 40 V DSI 60 A DR .Typ 5.4 m DS(ON)@10V R .Typ 7.8 m DS(ON)@4.5V FEATURES Advanced Trench Technolog
Datasheet: BLM04N08-P , BLM055N04-D , BLM05N03-D , BLM06N03-D , BLM06N10-B , BLM06N10-P , BLM075N04-D , BLM07N06-D , IRF1405 , BLM07N20-C , BLM08N06-D , BLM08N06-E , BLM08N06-P , BLM08N10-B , BLM08N10-P , BLM08N68-P , BLM08P02-E .
History: TPW65R120M | AP99T06AGP-HF | AP6985GN2-HF | IRLR8256PBF | IXFT28N50Q | MSF2N70 | AP4506GEH-HF
Keywords - BLM07N06-P MOSFET datasheet
BLM07N06-P cross reference
BLM07N06-P equivalent finder
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History: TPW65R120M | AP99T06AGP-HF | AP6985GN2-HF | IRLR8256PBF | IXFT28N50Q | MSF2N70 | AP4506GEH-HF



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