BLM07N06-P MOSFET. Datasheet pdf. Equivalent
Type Designator: BLM07N06-P
Marking Code: M07N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 143 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 95 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 80 nC
trⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 345 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO-220
BLM07N06-P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLM07N06-P Datasheet (PDF)
blm07n06-p blm07n06-d.pdf
Green Product BLM07N06 60V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM07N06 uses advanced trench technology to provide V = 60V,I = 95A DS Dexcellent R , low gate charge. It can be used in a wide R
blm07n20-c.pdf
BLM07N20Power MOSFET1. DescriptionAdvantagesBLM07N20 uses advanced trench technology anddesign to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety ofapplications.Key CharacteristicsParameter Value UnitV 200 VDS@Tj.maxI 155 ADR 6.5 mDS(ON).TypFeatures High power and current handing capability Lead free product
blm075n04-d.pdf
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