BLM08N06-D Datasheet and Replacement
Type Designator: BLM08N06-D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 107 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 270 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO-252
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BLM08N06-D Datasheet (PDF)
blm08n06-p blm08n06-d blm08n06-e.pdf

Green Product BLM08N06 60V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM08N06 uses advanced trench technology to provide V = 60V,I = 80A DS Dexcellent R , low gate charge. It can be used in a wide R
blm08n10-p blm08n10-b.pdf

Green Product BLM08N10 100V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM08N10 uses advanced trench technology to provide V = 100V,I = 110A DS Dexcellent R , low gate charge. It can be used in a wide R
blm08n68-p.pdf

Green Product BLM08N68 68V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM08N68 uses advanced trench technology to provide V = 68V,I = 90A DS Dexcellent R , low gate charge. It can be used in a wide R
blm08p02-r blm08p02-e.pdf

Green Product BLM08P02 30V P-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM08P02 uses advanced trench technology to provide V = -20V,I = -40A (PDFN3.3*3.3) DS Dexcellent R , low gate charge. It can be used in a wide DS(ON) I = -25A (SOP8) Dvariety of applications. R
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: AP70L02GJ | WML11N80M3 | PSMN8R5-100ES | CS5630 | PMDPB70EN | PMT29EN | STP85N3LH5
Keywords - BLM08N06-D MOSFET datasheet
BLM08N06-D cross reference
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History: AP70L02GJ | WML11N80M3 | PSMN8R5-100ES | CS5630 | PMDPB70EN | PMT29EN | STP85N3LH5



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